Abstract:Theoretically, the upper limit performance of nanoscale transistor should be limited by carrier transit time through the channel as the charge in channel cannot follow the gate voltage and the gate capacitance will show strong frequency dependence if the gate voltage varies faster than the carrier transit time. Currently, the operation frequency of nanoscale transistor is limited by the non-ideal factors such as parasitic effects, and it is far below the limit caused by carrier transit time. However, how good the transistor can be if one can minimize these non-ideal factors is still a problem, thus, it would be worth exploring its upper limit performance. In this article, time-dependent quantum transport simulation is performed to explore the carrier transit limited performance of the gate-all-around (GAA) Si nanowire transistor. By using the mode space approach, the 3-D time-dependent quantum transport equation is decoupled to a 2-D confinement problem and a 1-D transport problem, and then self-consistently solved with the Poisson’s equation. The transient characteristics of channel charge are investigated, and it shows the response time of channel charge is in the scale of 0.1 ps. The responses of channel charge and drain current to high-frequency gate voltages are simulated. The carrier transit limited performance including the frequency-dependent gate capacitance and transconductance, 3 dB bandwidth, and cutoff frequency, are calculated and discussed.

Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 Nm Node

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 Nm Gate-All-Around Nanosheet Transistor

Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets

A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors