Abstract:In this work, a semi-analytical compact model of random process fluctuations in nanosheet (NS) gate-all-around (GAA) complementary FET (CFET) is proposed, including work-function variation (WFV), line edge roughness (LER), and gate edge roughness (GER). Different from the conventional NS GAA FET, GER has a significantly different impact on NS GAA CFET, due to the additional p-type work-function (p-WF) liner for p-FET threshold voltage tuning as well as the common metal gate, and a negative correlation with p-WF thickness is introduced into GER model. The proposed model is embedded into Berkeley short-channel insulated-gate field-effect transistor model-common multi-gate (BSIM-CMG) to predict the device performance variability by HSPICE Monte Carlo (MC) simulations. Excellent agreement between stochastic TCAD and HSPICE MC simulations is demonstrated. The effect of process variations on the power-performance-area (PPA) of standard cells (SDCs) and ring oscillator (RO) circuit is predicted by the proposed model. Most of the process variations make a more than −10% to +20% change in power consumption in NOR2. WFV has the greatest impact on RO PPA, making a −10% to +12.3% change in power consumption. The proposed model provides a helpful guideline for the random variation-aware CFET circuit design and related technology process development.

Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

A novel experimental investigation on scalable model for on-chip GaAs MESFETs

The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Modeling, Simulation and Performance Analysis of Drain Current for Below 10 nm Channel Length Based Tri-Gate FinFET

TCAD‐based statistical modeling methodology for nanoscale FinFET variability

Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance

Modeling, optimization and comprehensive comparative analysis of 7nm FinFET and 7nm GAAFET devices

Critical Parameters of Gate Control in NC-FinFET on GaAs

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 Nm Node

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Impact of the Figures of Merit (foms) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes