Abstract:Nowadays, reliability towards the interface trap charges of the semiconductor device is a major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of mole fraction-based dual material stack gate oxide pocket-doped heterojunction tunnel field-effect transistor (DM-SGO-PD-HTFET) considering ideal conditions for reliability issues. A stacked gate oxide is employed in the proposed device to reduce leakage current. Moreover, a dual material gate (M1 = M3 and M2) is implemented at the gate electrode, with work functions ( ϕ 1 = ϕ 3 = 4.0 eV) and ( ϕ 2 = 4.4 eV), and a mole fraction-based hetero material S i 1 − X G e X is used at the source-side region to enhance tunneling current. The mole fraction value (X) is varied to optimize device performance. Furthermore, an N + pocket-doped layer at the source channel interface is incorporated to further enhance the tunneling current. Additionally, trap charges at the oxide–semiconductor interface are generated during the fabrication process degrading the device’s performance. For this, we have considered donor (positive) and acceptor (negative) interface trap charges (ITCs) at the semiconductor/insulator interface to investigate the performance of the device in terms of DC, analog/radio frequency, linearity, and harmonic distortion performance parameters using Silvaco ATLAS device simulator. A comparative analysis has been performed between the proposed and conventional device structures with similar dimensions except N + pocket doped layer. In this context, various performance metrics are examined, including the carrier concentration profile, energy band variation, tunneling rate, current density, transfer characteristics, transconductance, gain-bandwidth product, transit time, unity gain frequency, as well as figures of merit related to linearity. These linearity figures include the third-order transconductance coefficient ( g m 3 ), second and third-order voltage intercept points (VIP2, VIP3), third-order intermodulation distortion, input intercept point parameters (IMD3, IIP3), and harmonic distortion performance parameters such as second-order, third-order, and total harmonic distortions (i.e., HD2, HD3, and THD). Simulated results demonstrate that DM-SGO-PD-HTFET is more immune towards various types of ITCs compared to conventional DM-SGO-HTFET. Therefore, DM-SGO-PD-HTFET is more reliable than the conventional device for ultra-low-power applications.

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