Abstract:The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered one of the best candidates for ultimately scaled CMOS devices at the end of the technology roadmap. This paper reviews our recent work on the key issues regarding SNWTs from the top-down approach including process integration, carrier transport, and fluctuation and variability in these unique one-dimensional strongly-confined nanowire devices. A new process integration scheme for SNWTs is discussed, which features a fully-Si-bulk substrate, an epi-free process, a self-aligned structure and a large source/drain fan-out. The physical characteristics of the fabricated devices with 10-nm-diameter nanowires are further investigated. The carrier transport performance in SNWTs is experimentally estimated, with a modified extraction methodology which takes into account the impact of temperature dependence of parasitic source resistance. SNWTs with sub-40-nm gate lengths exhibit high ballistic efficiency at room temperature, indicating great potential for SNWTs as an alternative device structure for near-ballistic transport. For heat transfer in SNWTs, the self-heating effect is also characterized. However, due to the one-dimensional (1-D) nature of nanowires and increased phonon-boundary scattering in the GAA structure, the self-heating effect in SNWTs based on the bulk substrate is comparable or even a little bit worse than SOI devices, which may limit the ultimate performance of SNWT-based circuits and thus, special design consideration is expected. On the other hand, random variation has become a practical problem at nano-scale. The characteristic variability of SNWTs is experimentally studied in detail. The results of extracted variation sources indicate that, with suppressed random dopant fluctuations in the intrinsic channel, variations in radius and metal-gate work function of SNWTs dominate both the threshold voltage and on-current fluctuations. Comparing with conventional planar MOS devices, SNWT based SRAM cells exhibit better stability due to the superior electrostatic control in SNWTs.

Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Investigation Ofanalog/rf Performance and Reliability Behavior Ofsilicon Nanowire MOSFETs(invited)

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Investigation of Analog/RF Performance and Reliability Behavior of Silicon Nanowire MOSFETs

Investigation of Gate-All-around Silicon Nanowire Transistors for Ultimately Scaled CMOS Technology from Top-Down Approach

Performance studies in nanowire field-effect transistors with different cross sections

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Study of low frequency noise behavior in silicon nanowire transistors fabricated with top-to-down approach

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Experimental Investigations on Channel Backscattering Characteristics of Gate-All-around Silicon Nanowire Transistors from Top-Down Approach

Performance Investigation on the Reconfigurable Si Nanowire Schottky Barrier Transistors

Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models

A Comprehensive Study on Schottky Barrier Nanowire Transistors (Sb-Nwts): Principle, Physical Limits and Parameter Fluctuations

Improving Analog/Rf Performance of Multi-Gate Devices Through Multi-Dimensional Design Optimization with Awareness of Variations and Parasitics