Abstract:Inthis paper, theanalog/RF performance and II.Analog/RF performance ofthesilicon nanowire reliability behavior ofsilicon nanowire transistors transistors (SNWTs)areinvestigated. Analog/RF Figures-of-Merit TheRF/analog potential ofSNWTs isstudied (FoMs)of SNWTs are studied, includingthrough three-dimensional numerical device simulator transconductance efficiency, intrinsic gain,cutoffSynopsys TCAD Sentaurus. Theschematic viewofthe frequency andmaximumoscillation frequency. The simulated structure isshowninFig. 1(a). Thekey impact ofdevice parameter fluctuations isalso evaluated. parameters ofthesimulated SNWTsareshowninTable . Inaddition, hotcarrier injection (HCI) andnegative bias The three-dimensional (3D)density-gradient temperature instability (NBTI) reliability ofn-type and quantumcorrection drift-diffusion_ model intheTCAD p-type SNWTsisstudied. Theworse-case biasofHCI tooliscalibrated fortheSNWTs simulation. The andHCIlifetime forthen-type SNWTsarediscussed, as transfer characteristics of cylinder gate-all-around wellasDC/ACNBTI ofthep-typeSNWTs and nanowire MOSFETwithidentical device parameters can dependence offrequency andgatevoltage. Abnormalbewellreproduced bytheTCAD tool, andagree well NBTIfluctuation inshort-channel SNWTswasobservedwiththeresults fromthe3D full quantum simulation andanalyzed, withanewon-line Igmethod demonstrated whichismoreaccurate butmuchcostly (7), asshownin forthesuppression ofthis NBTIfluctuation.

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