Abstract:Author(s): Guo, Zheng | Advisor(s): Nikolic, Borivoje | Abstract: Continued increase in the process variability is perceived to be a major roadblock for future technology scaling. Its impact is particularly pronounced in large memory arrays due to both the utilization of minimum sized transistors and their extremely large data capacity. In order to enable the continued scaling of the next-generation embedded SRAM, the ability to monitor and characterize, on-chip, the variations in SRAM functionality and performance becomes critical for both gaining a deeper understanding of the sources of variability and for developing more robust circuits and topologies. This work presents a methodology to characterize, directly, the impact of process variability on the functionality of large SRAM-based cache memories - capable of collecting massive silicon data at little hardware and/or design overhead. In addition, a thorough investigation of various SRAM read stability and writeability metrics, including the proposed large-scale design metrics, is conducted to further understand the utility of each metric for SRAM yield prediction. The large-scale characterization methodology is validated on two different test chips, fabricated in an early commercial low-power 45nm CMOS process. This method can be easily extended to capture more than 6 standard deviations of parameter variations by increasing the SRAM array size, and therefore can serve as a valuable addition to the next-generation SRAM development vehicle.The enablement of future SRAM scaling will require technology and circuit co-design. The FinFET technology is particularly attractive for nanoscale SRAM design not only for its reduced σVTH and better control of the short channel effects (SCE), but also for the architectural flexibility enabled by its unique independently-gated (IG) operation. New bitcell designs are presented to take advantage of this IG operation in the form of a dynamic pass-gate feedback (PGFB). It is shown that the IG FinFET design using dynamic PGFB can both dramatically enhance the read stability of a 6-T SRAM cell and enable the practical design of a 4-T SRAM cell. While increased variability presents a formidable challenge for future SRAM scaling, the presented methodologies, both in testing and design, can facilitate its continuation.

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Variability investigation of gate-all-around silicon nanowire transistors from top-down approach

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Performance Investigation of Sram Cells Based on Gate-All-Around (gaa) Si Nanowire Transistor for Ultra-Low Voltage Applications

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 Nm Node

Statistical Variability Analysis In Vertically Stacked Gate All Around Fets At 7 Nm Technology

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

Large-Scale Variability Characterization and Robust Design Techniques for Nanoscale SRAM

Self-heating effect and characteristic variability of gate-all-around silicon nanowire transistors for highly-scaled CMOS technology (invited)

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Investigation of Read Voltage Impact on Foundry BEOL RRAM for Core Integration

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Resisitive Switching Variability Study on 1T1R AlOx/WOx-based RRAM Array