Abstract:Author(s): Guo, Zheng | Advisor(s): Nikolic, Borivoje | Abstract: Continued increase in the process variability is perceived to be a major roadblock for future technology scaling. Its impact is particularly pronounced in large memory arrays due to both the utilization of minimum sized transistors and their extremely large data capacity. In order to enable the continued scaling of the next-generation embedded SRAM, the ability to monitor and characterize, on-chip, the variations in SRAM functionality and performance becomes critical for both gaining a deeper understanding of the sources of variability and for developing more robust circuits and topologies. This work presents a methodology to characterize, directly, the impact of process variability on the functionality of large SRAM-based cache memories - capable of collecting massive silicon data at little hardware and/or design overhead. In addition, a thorough investigation of various SRAM read stability and writeability metrics, including the proposed large-scale design metrics, is conducted to further understand the utility of each metric for SRAM yield prediction. The large-scale characterization methodology is validated on two different test chips, fabricated in an early commercial low-power 45nm CMOS process. This method can be easily extended to capture more than 6 standard deviations of parameter variations by increasing the SRAM array size, and therefore can serve as a valuable addition to the next-generation SRAM development vehicle.The enablement of future SRAM scaling will require technology and circuit co-design. The FinFET technology is particularly attractive for nanoscale SRAM design not only for its reduced σVTH and better control of the short channel effects (SCE), but also for the architectural flexibility enabled by its unique independently-gated (IG) operation. New bitcell designs are presented to take advantage of this IG operation in the form of a dynamic pass-gate feedback (PGFB). It is shown that the IG FinFET design using dynamic PGFB can both dramatically enhance the read stability of a 6-T SRAM cell and enable the practical design of a 4-T SRAM cell. While increased variability presents a formidable challenge for future SRAM scaling, the presented methodologies, both in testing and design, can facilitate its continuation.

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

The impact of line edge roughness on the stability of a FinFET SRAM

The Impact of Random Doping Effects on CMOS SRAM Cell

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

The impact of random doping effects on CNIOSSRAM cell

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM

Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Impact of Intrinsic Parameter Fluctuations in Decanano MOSFETs on Yield and Functionality of SRAM Cells

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Large-Scale Variability Characterization and Robust Design Techniques for Nanoscale SRAM

The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM

On the SRAM with Comb-Shaped Nano FETs Advancing to 3 Nm Node and Beyond

Investigation on the Vdd Scaling Limit of Stochastic Computing Circuits Based on FinFET Technology

Evaluation and Optimization of Physical Unclonable Function (PUF) Based on the Variability of FinFET SRAM

A FinFET-based static memory cell optimized for stability and low power consumption

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM