Abstract:The influences of reducing the supply voltage on single event upset (SEU) and multiple-cell upset (MCU) in two kinds of 65-nm static random access memories (SRAMs) are characterized across a wide linear energy transfer (LET) range. The results show that the influence of the voltage variation on SEU cross section clearly depends on the LET value which is above heavy ion LET threshold no matter whether the SRAM is non-hardened 6T SRAM or radiation-hardened double dual interlocked cells (DICE) SRAM. When the LET value is lower than the LET threshold of MCU, the SEU only manifests single cell upset, the SEU cross section increases with the decrease of voltage. The lower the LET value, the higher the SEU sensitivity to the voltage variation is. Lowering the voltage has no evident influence on SEU cross section while the LET value is above the LET threshold of MCU. Moreover, the reduction of the voltage can result in a decrease in the highest-order MCU event cross section due to the decrease of charge collection efficiency of the outer sub-sensitive volume within a certain voltage range. With further scaling the feature size of devices down, it is suggested that the dependence of SEU on voltage variation should be paid special attention to for heavy ions with very low LET or the other particles with very low energy for nanometer commercial off-the-shelf (COTS) SRAM.

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

The Gate Length Dependence of Single Event Upset in 14nm Bulk and SOI Finfet Sram Cells

Investigation On Impact Of Fin Width On Single-Event-Transient In Bulk And Soi Finfets

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM

Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM Cells

The impact of line edge roughness on the stability of a FinFET SRAM

Electrothermal characterization of SOI FinFETs

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Influences of Supply Voltage on Single Event Upsets and Multiple-Cell Upsets in Nanometer SRAM Across a Wide Linear Energy Transfer Range*

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM