Abstract:Fin field effect transistor (FinFET) is a most widely used structure when the field effect transistor is scaled down to 30 nm or less. And there are few studies on single-event transient of FinFET devices with gate length below 30 nm. The single-event-transient on FinFET with gate length below 30 nm is worth studying. The single-event-transient responses of bulk FinFETs with 30 nm, 40 nm, 60 nm and 100 nm gate length are examined by using the pulsed laser and technology computer-aided design (TCAD) simulation in this article. First, we use the pulsed laser to ionize the gate of the FinFET device and detect the transient drain current of the FinFET device. The experimental results show that there are obvious platforms for the transient drain current tails of FinFETs with different gate lengths, and the platform current increases as the gate length of FinFET becomes shorter. The charges collected in the platform of FinFET devices with gate lengths of 100, 60, 40, and 30 nm are 34%, 40%, 51%, and 65% of the total charge collected in transient drain current, respectively. Therefore, when the FinFET device with the gate length below 100 nm, the platform current will seriously affect the device performance. Second, we use TCAD to simulate the heavy ion single-event effect of FinFET device and study the generation mechanism of platform region in transient drain current. The TCAD simulation explains this mechanism. Laser or heavy ions ionize high concentration electron-hole pairs in the device. The holes are quickly collected and the high concentration electrons are left under the FinFET channel. High concentration electrons conduct source and drain, generating the source-to-drain current at the tail of the transient drain current. Moreover the source-drain conduction enhances the electrostatic potential below the FinFET channel and suppresses high-concentration electron diffusion, making source-to-drain current decrease slowly and form the platform. The transient drain current tail has a long duration and a large quantity of collected charges, which seriously affects FinFET performance. This is a problem that needs studying in the single-event effect of FinFET device. It is also a problem difficult to solve when the FinFET devices are applied to spacecraft. And the generation mechanism of the transient drain current plateau region of FinFET device can provide theoretical guidance for solving these problems.

Investigation On Impact Of Fin Width On Single-Event-Transient In Bulk And Soi Finfets

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

Electrothermal characterization of SOI FinFETs

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Influence of the STI on Single-Event Transients in Bulk FinFETs

Effect of Source-Drain Conduction in Single-Event Transient on Nanoscaled Bulk Fin Field Effect Transistor

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

The Impact of PTS Doping and Fin Angle on TID Response of 14-Nm Bulk FinFETs

Influence of Gate-Source/Drain Misalignment on the Performance of Bulk Finfets by A 3d Full Band Monte Carlo Simulation

Three-Dimensional Monte Carlo Simulation of Bulk Fin Field Effect Transistor

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

Effects of Fin Shape on Sub-10 Nm FinFETs

The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node