Abstract:The 3D tri-gate FinFET device architecture is a key transistor scaling to 22nm node and beyond for its excellent short-channel performance[1]. However, compared with planar transistors, it poses greater challenge in the finFET gate etch.[2] As shown in fig.1, the etch needs to stop on top of the fin while etching further down to the STI oxide layer. Therefore, the top of fin needs to endure long time over etch without any structural damage which would adversely affect device performance. What’s more, the gate profile must be vertical and there should not be residual in the corner of gate and fin. It is not an easy task to achieve, at the same time, the three goals of vertical gate profile, no residual in the corner of fin and gate, as well as no structure damage on the top of fin, due to an unavoidable tradeoff. More specifically, vertical gate profile and no residual in the corner of fin demand strong etch function and light polymer, while no structure damage in the top of fin requires weak etch function and heavy polymer, which points to high etch selectivity of silicon to oxide layer. To achieve good etch results, one often falls into this dilemma. As far as we know, few publicly available papers have provided satisfactory solutions to the above- mentioned problem. In this work, we deal with it. The process of gate stack with CD below 30nm is illustrated in fig.2. Then, a HBr/O2 process in transformer coupled plasma is applied to finFET gate etch. As shown in fig.3, gate profile is vertical, fin is well protected and no residual appears in the corner fin. In conclusion, an HBr/O2 plasma etch process of finFET gate with CD below 30nm is investigated.Through appropriate tradeoff , an etch result of vertical gate profile, no residual in the sidewall and corner of fin, no structure damage on the top of fin is achieved.

Effects of Fin Shape on Sub-10 Nm FinFETs

Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Scaling Theory for FinFETs Based on 3-D Effects Investigation

Advantages, manufacturing processes and challenges of FinFET technology

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

A Sub-10nm U-Shape Finfet Design with Suppressed Leakage Current and Dibl Effect

An Optimized FinFET Channel with Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology

The side effects on N-Type FinFET Devices

Scallop-shaped p-type FinFETs with improved short-channel effects immunity and driving current

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

Nanoscale Triple-Gate FinFET Design Considerations Based on an Analytical Model of Short-Channel Effects

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

Ultra-High Aspect Ratio Poly-Si Finfet Using an Improved Spacer Formation Technique

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Finfet Gate Etch Towards 16nm Node CMOS Technology

Critical Parameters of Gate Control in NC-FinFET on GaAs