Abstract:Background: The insatiable need for low-power and high-performance integrated circuit (IC) results in the development of alternative options for metal oxide semiconductor field effect transistor (MOSFET) in the ultra-nanoscale regime. The practical challenge of the device scaling limits the use of MOSFET for future technology nodes. ICs are equipped with billions of transistors whose size must be scaled while increasing performance. As the size of the transistor shrinks for the new technology node, the control of the gate over the channel also reduces, leading to sub-threshold leakage. The non-planar technology is the potential methodology to design the ICs for the future technology nodes. The fin-shaped field effect transistor (FinFET) is the most valuable non-planar technology. High sub-threshold slope, better short channel effect (SCE) control, high current drive strength, low dopant-prompted variations, and decreased power dissipation are the prominent features of FinFET technology. Objective: FinFET is an advanced version of MOSFET in terms of geometrical structure. Therefore, in this review paper, the different geometrical structures, working operations, design challenges, future aspects, and the different configurations of FinFETs are presented. The performance of the different configurations of a 1-bit full adder is evaluated and compared. Methods: An overview of FinFET evolution from the planar MOSFET, along with its architecture supported by the requisite equations, is presented in the paper. Besides this, it also gives an insight into the circuit simulation using the FinFETs for the process voltage temperature (PVT) variations, width quantization, design challenges, and the future of FinFETs. A comparative study of FinFET-based 1-bit full adder using various techniques is done to compute and compare the leakage power, delay, and power delay product (PDP). Results: The full adders using FinFETs show less leakage power and PDP. The AND-OR logicbased hybrid full adder using FinFETs shows the least energy consumption per switching. Fin- FET-based gate diffusion input adder shows a 74 % reduction in dynamic power compared to the full adder using MOSFET technology. The low power FinFET-based full adder shows a 54.16 % reduction in leakage power compared to the MOSFET-based full adder. The results signify the effect of multi-gates in curbing the leakage power dissipation. Conclusion: MOSFET faces the practical challenge of device scaling and SCEs at lower technology nodes. It initiates the multi-gate technology for future system generation. FinFET has the capability to design low-power and high-performance circuits in an ultra-nanoscale regime. The geometrical structure of FinFET plays a key role to improve the performance metrics in an ultrananoscale regime.

Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs

Effects of Fin Shape on Sub-10 Nm FinFETs

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit

Design Considerations into Circuit Applications for Structurally Optimised FinFET

Review of the Nanoscale FinFET Device for the Applications in Nano-regime

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

Enhanced Circuit Densities in Epitaxially Defined FinFETs (EDFinFETs) over FinFETs

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

TCAD simulation of sub-10 nm high-k SOI GaN FinFET by implementing fin optimization approach for high-performance applications

Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current

Strategic Review on Different Materials for FinFET Structure Performance Optimization

Nanoscale Triple-Gate FinFET Design Considerations Based on an Analytical Model of Short-Channel Effects

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs