Abstract:Nanowires, due to their unique properties, are emerging as the building blocks of the next-generation electronics industry and will play a critical role in both low- and high-performance circuits and systems. This work presents the design, optimization, and analysis of a silicon (Si) and gallium-nitride nanowire field-effect transistor (GaN NW FET) to evaluate its performance at the ultra-scaled device dimensions required for GaN NW FETs in the electronics industry in order to increase the packing density and overall performance of the device. The analysis was carried out using self-consistent Poisson and Schrödinger equations based on a non-equilibrium Green function (NEGF) approach using Silvaco ATLAS. A reduction of 84.07% in the 'off' current was observed for the GaN NW FET, as compared to its Si counterparts, which reveals the requirement for a GaN NW FET at extremely scaled dimensions for 'off' state leakage suppression. Optimization of the electrostatic control mechanism, gate oxide, gate oxide thickness (tox), and metal work functions (ms) was performed using quantum simulation models to investigate the influence of these parameters on the device performance. A way of improving the Ion/Ioff ratio of the device has been reported using metal contact length and width variations. A 40% reduction in the subthreshold swing value offers improvements in the electrostatic control Ion/Ioff ratio of ~104, ~105, and 102 due to the respective optimizations of the metal contact length (Lc), metal contact width (Wc), and metal work function (ms) of the GaN NW FET, compared to the Si NW FET, thus making the GaN NW FET an intriguing option for digital electronics applications. A comparison of the semi-classical (Drift Diffusion_Mode Space) and quantum (Non-Equilibrium Green Function_Mode Space) transport models was also carried out to reveal the importance of the accuracy of these models at such low dimensions. This optimization and analysis will help us to further improve the performance of experimental work and will act as a reference for the same. This study reveals the performance advantages of the GaN NW FET over the Si NW FET for transistor applications in the electronics industry and can serve as a reference point for the researchers working in this area. To the best of our knowledge, no such comparison has been reported so far for Si and GaN NW FETs using 3 nm technology.

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance

Performance optimization of high-K GAA-PZT Negative Capacitance FET MFIS Silicon Nanowire for low power RFIC and analog applications

Device design and optimization of CNTFETs for high-frequency applications

Performance Comparison of Nanosheet FET, CombFET, and TreeFET: Device and Circuit Perspective

Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters

Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Performance Analysis of the Gate All Around Nanowire FET with Group III–V Compound Channel Materials and High-k Gate Oxides

Study On Scalability Of Hybrid Junctionless Finfet And Multi-Stacked Nanowire Fet By Tcad Simulation

Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure

RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS