Abstract:In this study on multi-nanosheet field-effect transistor (mNS-FET)-one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension-3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage from options including a punch-through-stopper (PTS) doping scheme and a bottom oxide (BO) scheme for bottom isolation, with the performance improvement being shown in the circuit-level dynamic operation using the mNS-FET. The PTS doping concentration requires a high value of >5 × 1018 cm-3 to reduce gate induced drain leakage (GIDL), regardless of the presence or absence of the bottom isolation layer. When the bottom isolation is applied together with the PTS doping scheme, the capacitance reduction is larger than the on-state current reduction, as compared to when only the PTS doping concentration is applied. The effects of such transistor characteristics on the performance and capabilities of various circuit types-such as an inverter ring oscillator (RO), a full adder (FA) circuit, and a static random-access memory (SRAM)-were assessed. For the RO, applying BO along with the PTS doping allows the operating speed to be increased by 11.3% at the same power, or alternatively enables 26.4% less power consumption at the same speed. For the FA, power can be reduced by 6.45%, energy delay product (EDP) by 21.4%, and delay by 16.8% at the same standby power when BO and PTS are both applied. Finally, for the SRAM, read current (IREAD) increased by 18.7% and bit-line write margin (BWRM) increased by 12.5% at the same standby power. Through the circuit simulations, the Case 5 model (PTS doping concentration: 5.1 × 1018 cm-3, with BO) is the optimum condition for the best device and circuit performance. These observations confirm that PTS and bottom isolation applications in mNS-FETs can be utilized to enable the superior characteristics of such transistors to translate into high performance integrated circuits.

NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

Modeling, optimization and comprehensive comparative analysis of 7nm FinFET and 7nm GAAFET devices

Design technique co-optimization approach to GAA FETs for inverter design at advanced technology node

Design Technology Co-Optimization for 3 Nm Gate-All-Around Nanosheet FETs

Physical Insights of Si-Core-SiGe-Shell Gate-All-Around Nanosheet pFET for 3 nm Technology Node

3D Logic Cells Design and Results Based on Vertical NWFET Technology Including Tied Compact Model

Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage

A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects

The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level

Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties