Abstract:Since the introduction of fast integrated circuits, semiconductor manufacturers have concentrated their efforts on reducing the size of transistors. Increased working frequencies (shorter transistors) and decreased power consumption are the goals of circuit designers working on large-scale production costs (with the lowering of supply voltage). Short channel effects (SCEs) are a side effect of transistor shrinkage. While reducing gate oxide thickness in downscaled devices, gate stack engineering is an approach that directs to an increase in leakage current (quantum tunnelling effect). SiO 2 's application as gate insulation is anticipated to result in a gradual increase in tunnelling leakage current. As a result, the market has witnessed an increase in innovative device architectures as Fin field effect transistors (FinFET). Nanosheets is a cutting-edge method that overcomes FinFET's constraints. In this study, sub-nm junction-less Gate Stack Silicon-on-Insulator (SOI) nanosheet FinFETs (NS FinFET) for both low and high levels of doping are examined. From doping concentration (ND) range of 10 16 cm-3 to 10 19 cm-3, the comprehensive DC performance evaluation is examined, including transfer characteristics, output characteristics, subthreshold swing (SS), drain induced barrier lowering (DIBL), and ION/IOFF ratio. The proposed Junction less FinFET produces better switching characteristics with IOFF getting less than nA for all the doping ranges. Furthermore, dynamic power and power consumption of the proposed JLFET is investigated. It shows paradigm shift for the semiconductor industries for low-power and high-performance applications at sub-nm region.

Study On Scalability Of Hybrid Junctionless Finfet And Multi-Stacked Nanowire Fet By Tcad Simulation

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

A Multiscale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

A Multi-Level Simulation of GeH FETs: from Nanomaterial and Device Characteristics to Circuit Performance Optimization.

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

Simulation Study of Lateral Ceft Logic Performance at 3 Nm Node

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

An Analytical Model for Nanowire Junctionless SOI FinFETs with Considering Three-Dimensional Coupling Effect

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

Quantum Transport Simulations of Cntfets: Performance Assessment and Comparison Study with Gnrfets