Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

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Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

The Impact of PTS Doping and Fin Angle on TID Response of 14-Nm Bulk FinFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-Nm Nmosfets: Concerns on the Layout-Dependent Effects

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Impact of TID radiation on hot-carrier effects in 65NM bulk Si NMOSFETs

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Investigation on TID tolerance of 65nm bulk silicon nMOSFETs

A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses