Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

A new self-aligned BOI (Body-on-insulator) finfet fabricated on bulk SI wafers

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence

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Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Hot Carrier Effect and Oxide Reliability of T-FinFET Devices

Enhanced Total Ionizing Dose Response of 16 nm n-FinFETs With a Single Fin