Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Electrothermal characterization of SOI FinFETs

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Investigation on self-heating effect in carbon nanotube field-effect transistors

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Investigation On Impact Of Fin Width On Single-Event-Transient In Bulk And Soi Finfets

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Electrothermal Effects on Hot Carrier Injection in N-Type Soi Finfet under Circuit-Speed Bias

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

Impact Of Ambient Temperature On The Self-Heating Effects In Finfets

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-Nm CMOS Technology

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Ultra Fast (<1 Ns) Electrical Characterization of Self-Heating Effect and Its Impact on Hot Carrier Injection in 14nm FinFETs

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs