Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-Nm CMOS Technology

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Effect Of Charge Sharing On The Single Event Transient Response Of Cmos Logic Gates

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains under Pulsed Laser and Heavy-Ion Irradiation

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

An Inverter Chain with Parallel Output Nodes for Eliminating Single-Event Transient Pulse.

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

A Dual-Output Hardening Design of Inverter Chain for P-hit Single-Event Transient Pulse Elimination

Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

New Concerns on Heavy Ion Irradiation Induced Variation Degradation in Nanoscale CMOS Devices