Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Inverstigation of high turn-on speed MOS-Triggered SCR in 0.13μm CMOS process

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Investigation of Boundary-Mos-triggered SCR Structures for On-Chip ESD Protection

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

A novel multi-RC-triggered power clamp circuit for on-chip ESD protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

Design and Verification of a Novel Multi-Rc-triggered Power Clamp Circuit for On-Chip ESD Protection

Area-Efficient Power-Rail ESD Clamp Circuit with False-Trigger Immunity in 28nm CMOS Process

ESD Protection of NMOS Device at Different Gate Bias

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Compact MOS-triggered SCR with faster turn-on speed for ESD protection

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices