Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

A Dual-Output Hardening Design of Inverter Chain for P-hit Single-Event Transient Pulse Elimination

An Inverter Chain with Parallel Output Nodes for Eliminating Single-Event Transient Pulse.

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains under Pulsed Laser and Heavy-Ion Irradiation

A fault-tolerant T-type three-level inverter system

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-Nm CMOS Technology

Layout Based Radiation Hardening Techniques Against Single-Event Transient

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

A Single Event Upset Tolerant Latch with Parallel Nodes.

Safe Stop-Pulsing Strategy for IGCT-based Three-Level Neutral Point Clamped Inverters

Optimal Design of Two Level Inverters

Power Supply Chain with Series Insulation Structure for High Voltage Marx Pulse Generator

Double Node Upsets Hardened Latch Circuits

Radiation hardened SOI inverter

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

Highly Robust P-Gan Gate HEMT with Surge-Energy Ruggedness under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Ultrahigh-performance inverters based on CdS nanobelts.

Elimination of Abnormal Output Voltage in a Hybrid Active NPC Inverter

High Performance Split-Gate-Trench MOS Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects