Radiation hardened SOI inverter
Hongchen Zhao,Chaohe Hai,Zhengsheng Han,He Qian,Hong Si
2005-01-01
Abstract:A radiation hardened SOI inverter with an additional pMOS1 and a nMOS1 is fabricated. When the inverter is irradiated, the source-drain voltage of nMOS in the inverter will be reduced by the high output voltage of pMOS1 and nMOS1. As a result, the leakage current decreases and the high output voltage will be maintained. After a radiation of 6 × 105 rad (Si), the output voltage does not decrease.
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