Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

A. Makihara,M. Midorikawa,T. Yamaguchi,Y. Iide,T. Yokose,Y. Tsuchiya,T. Arimitsu,H. Asai,H. Shindou,S. Kuboyama,S. Matsuda

DOI: https://doi.org/10.1109/tns.2005.860716

IF: 1.703

2005-12-01

IEEE Transactions on Nuclear Science

Abstract:We designed logic cells hardened for single-event upsets/singe-event transients (SEUs/SETs) using hardness-by-design (HBD) methodology on OKI's 0.15 $\mu$ m fully depleted complementary metal–oxide–semiconductor/silicon-on-insulator (CMOS/SOI) commercial process and evaluated the sample devices. Our previous work demonstrates that SET-free inverters can be successfully applied as SEU-immune latches. In this paper, the native latches are redesigned using SET-free inverters not only for the inverter loop but also for several types of clock gates (L-SETfree-LoopCK, L-SETfree-LoopCK-SmallArea, and L-SETfree-LoopCK-AddTr.). In addition, the native combinational logic cells are redesigned using SET-free inverters as SET-free NAND and SET-free NOR. Excellent SEU/SET hardness of the HBD latches were achieved up to LET of 64 MeV/(mg/cm2).

engineering, electrical & electronic,nuclear science & technology