Abstract:Continuously scaling down ICs result in more stringent electrostatic discharge (ESD) protection design requirements. Compared with other devices, silicon-controlled rectifier (SCR) has become the first choice for its area efficiency and robustness. In order to improve the latch-up issue of SCR, various schemes have been proposed. A simple method is to extend the SCR path length, which will result in the enlarged ON resistance. Segment technology is also used to improve the holding voltage of SCR, but it will shrink the effective emitter area and lead to the serious degradation of ESD robustness. MS-LVTSCR is used to protect CMOS input ports. The circuit operating voltage is 3.3V and the gate oxide DC breakdown voltage is 19V so that considering the safety margin, the ESD window is from 3.63V to 17.1V. This work proposes a novel MOS shunt low-voltage trigger silicon-controlled rectifier (MS-LVTSCR) electrostatic discharge protection device by inserting an embedded PMOS structure. Compared with the conventional LVTSCR, the proposed MS-LVTSCR achieves 53% improvement in the holding voltage and still maintains high ESD robustness with a current level of 31.5 mA/ μ m without more device area consumption. In addition, both the TCAD simulation and theoretical analysis were carried out to explore the principle of current shunt effect to improve holding voltage. The extra shunt paths will weaken the conductance modulation effect of the main drift region in the main SCR path and its holding voltage can be further raised by reducing the proportion of main drift region current in the total current. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via experimental validations.

Study of Single Event Latch-Up Hardness for CMOS Devices with a Resistor in Front of DC-DC Converter

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Research on single event latch-up effect of CMOS based on TCAD

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Investigation on MOS shunt LVTSCR for ESD application

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

A Novel MOSFET based Single Event Latchup Detection, Current Limiting & Self Power Cycling circuit for Spacecraft systems

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

EXPERIMENTAL STUDY AND SPICE SIMULATION OF CMOS INVERTERS LATCH-UP EFFECTS DUE TO HIGH POWER MICROWAVE INTERFERENCE

Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

Device Simulation Studies on Latch-Up Effects in CMOS Inverters Induced by Microwave Pulse

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process

A Non-Redundant Latch with Key-Node-Upset Obstacle of Beneficial Efficiency for Harsh Environments Applications

A Novel Low-Cost TMR-Without-Voter Based HIS-Insensitive and MNU-Tolerant Latch Design for Aerospace Applications