Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

Novel Electrostatic Discharge Protection Design Method

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

FOD Based ESD Protection Devices in Deep Sub-micron Technology

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Static CMOS Latch-Up Considerations in HVIC Design

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

A novel gate-suppression technique for ESD protection.

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Whole Chip ESD Protection Design for 2.4 GHz LNA

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device