Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Novel Electrostatic Discharge Protection Design Method

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

FOD Based ESD Protection Devices in Deep Sub-micron Technology

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

A novel gate-suppression technique for ESD protection.

Design of A Gate-Coupled Electrostatic Discharge Protection Structure

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.