Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

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Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

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A Study of Process/device/layout Co-Design for Full-Chip ESD Protection in BCD Technology

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Design and Analysis of Full-Chip HV ESD Protection in BCD30V for Mixed-Signal ICs.

An Overview of ESD Protection in Nanometer IC

Novel Electrostatic Discharge Protection Design Method

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

Whole Chip Esd Protection for 2.4 Ghz Lna

Whole Chip ESD Protection Design for 2.4 GHz LNA

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

Low-parasitic ESD Protection Strategy for RF ICs in 0.35μm CMOS Process

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology