Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

Low-parasitic ESD Protection Strategy for RF ICs in 0.35μm CMOS Process

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Low-Capacitance SCR Structure for RF I/O Application

Whole Chip Esd Protection for 2.4 Ghz Lna

Whole Chip ESD Protection Design for 2.4 GHz LNA

FOD Based ESD Protection Devices in Deep Sub-micron Technology

A Study of Accurate Extraction of ESD Parasitic Capacitance

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

A 5kv Esd-Protected 2.4ghz Pa in 180nm Rfcmos Optimized by Esd-Pa Co-Design Technique

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

Novel Electrostatic Discharge Protection Design Method

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Improvement on Diode String Structure for 65-Nm RF ESD Protection

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System