Abstract:Electrostatic discharge (ESD) is a critical factor affecting the reliability of advanced integrated circuit chips. Simulating device-level ESD in chips has become a challenging task due to the lack of a standardized physical model capable of characterizing a wide range of electrostatic stress conditions. This article introduces a novel passive hybrid ESD model, aiming to address this issue. The model greatly simplifies the calculation of nonlinear avalanche factor M and improves its convergence properties. In particular, the proposed modeling method simplifies parameter extraction and reduces modeling complexity and can achieve the device electrical characterization of direct-current (dc) breakdown, transient clamping, and I-V characteristics under different transmission line pulse (TLP) excitation conditions. We validated the effectiveness and accuracy of the proposed scheme using the 0.18- mu m standard bipolar-CMOS-DMOS (BCD) process. The passive hybrid ESD model is a custom modeling approach mainly used to achieve simple device-level simulation and limited device characteristic evaluation. However, its co-simulation with large-scale circuits still has limitations. Furthermore, the aforementioned modeling approach is applicable to various types of ESD structures. By adjusting the key parameters of the model, it becomes possible to characterize device properties under different structures and sizes.

Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Scalable behavior modeling for SCR based ESD protection structures for circuit simulation

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Scalable Behavior Modeling for Nano Crossbar ESD Protection Structures by Verilog-A

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Mixed-mode simulation-design for IEC-ESD protection

On-Chip ESD Protection Design for Ics

FOD Based ESD Protection Devices in Deep Sub-micron Technology

A Passive Hybrid Circuit Model for Electrostatic Discharge (ESD) Characterization

On-chip ESD Protection Design for Integrated Circuits: an Overview for IC Designers

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Low-parasitic ESD Protection Strategy for RF ICs in 0.35μm CMOS Process

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits