Abstract:Two new electrostatic discharge (ESD) protection devices, gate diode and area-efficiency diode-trigger silicon controlled rectifier (SCR), were proposed in order to improve the performance of ESD protection devices on VBO interface circuit. Traditional diodes, gated diodes, and area-efficient SCR were fabricated based on SMIC 40 nm CMOS process and SMIC 28 nm PS CMOS process. The total current densities of those three structures were analyzed with the simulation of TCAD software. Ⅰ-Ⅴ characteristics of those ESD protection devices were measured by transmission line pulse (TLP) testing after tape-out. The gate diode's ESD robustness was 19.7 mA/μm, and on-resistance was 1.28 Ω with a 38.8% reduction compared to conventional diode. The trigger voltage of area-efficiency diode trigger SCR was 1.82 V and robustness of it was 48.1 mA/μm, which was a 174.8% improvement over conventional diode. The test results show that the performance of the gate diode and the ASCR is greatly improved compared to the conventional ESD device and is suitable to be the ESD device of VBO interface chip.

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