Abstract:The whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under the 0.18 μm radio frequency CMOS process is proposed and verified in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for RF I/O pad ESD protection is evaluated and compared with the traditional SCR and diode. Measurement results show that the island complementary SCR has good ESD protection performance. Various triggering methods used in the ESD protection structure are studied for LNA power clamp ESD protection. Results indicate that RCMOS_SCR has high robustness and turn-on speed. In the whole chip ESD protection based on the above-mentioned two structures, island complementary SCR is applied as RF I/O ESD protection, which introduce 0.16 dB noise figure (NF) and 176 fF parasitic capacitance, at the same time it passes 6 kV human body model (HBM). Power clamp ESD protection uses RCMOS trigger SCR, which passes 5 kV HBM. Above ESD design has been verified and applied in Fundry.

A design technique overview on broadband RF ESD protection circuit designs

Co-design of ESD Protection and UWB RF Front-End ICs

Key Aspects on ESD Protection Design for ICs: Mixed-Mode Simulation and RF/mixed-signal ESD

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

An Optimized UWB Correlator Design with the Consideration of the Impacts from the ESD Protection Devices.

Electrostatic Discharge Protection for RF Integrated Circuits: New ESD Design Challenges

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Mixed-mode simulation-design for IEC-ESD protection

On-chip ESD Protection Design for Integrated Circuits: an Overview for IC Designers

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

A 5kv Esd-Protected 2.4ghz Pa in 180nm Rfcmos Optimized by Esd-Pa Co-Design Technique

A Study of Process/device/layout Co-Design for Full-Chip ESD Protection in BCD Technology

Design and Analysis of Full-Chip HV ESD Protection in BCD30V for Mixed-Signal ICs.

On-Chip ESD Protection Design for Ics

Whole Chip ESD Protection Design for 2.4 GHz LNA

Co-design of ESD protection and LNA in RFIC

An ESD-Aware 2.4 GHz PA Design for WLAN Application

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

Whole Chip Esd Protection for 2.4 Ghz Lna

Low-Capacitance SCR Structure for RF I/O Application

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI