Abstract:The whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under the 0.18 μm radio frequency CMOS process is proposed and verified in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for RF I/O pad ESD protection is evaluated and compared with the traditional SCR and diode. Measurement results show that the island complementary SCR has good ESD protection performance. Various triggering methods used in the ESD protection structure are studied for LNA power clamp ESD protection. Results indicate that RCMOS_SCR has high robustness and turn-on speed. In the whole chip ESD protection based on the above-mentioned two structures, island complementary SCR is applied as RF I/O ESD protection, which introduce 0.16 dB noise figure (NF) and 176 fF parasitic capacitance, at the same time it passes 6 kV human body model (HBM). Power clamp ESD protection uses RCMOS trigger SCR, which passes 5 kV HBM. Above ESD design has been verified and applied in Fundry.

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