Abstract:Optimizing electrostatic discharge (ESD) protection strategies requires simulation models of both <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on - and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -die ESD devices, but detailed information about <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -die ESD protection is rarely available. Methods are proposed in the following paper to characterize and model the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection using only measurements, with minimal <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a priori information about how the protection is implemented. The characterization targets a three-terminal (rather than the traditional two-terminal) protection structure, including the I/O, Vdd, Vss pins, and allows for current to flow between multiple pins simultaneously. A previously-developed behavioral model for TVS devices is used to capture the ESD behavior of the integrated circuit (IC), including its linear, quasi-static, and transient nonlinear response. The approach is used to model the equivalent current that flows through the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection of two commercial ICs. The model of the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection is combined with a behavioral model of an <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -chip transient voltage suppressor to demonstrate their combined performance in a system-efficient ESD design (SEED) simulation. The model is validated both when the IC is powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off and powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on . The SEED model was able to predict quasistatic and peak voltages and currents at the IC with less than a 10% error.

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Modeling Study of Power-On and Power-Off System-Level Electrostatic Discharge Protection

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design

System Efficient ESD Design of IO ESD Protection

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Mixed-mode simulation-design for IEC-ESD protection

A Wafer-Level Characterization Method of Esd Protection Circuits for Both Component-Level and System-Level Applications

Modeling IC Components Based on TLP I-V Curves and Transient Responses from SEED Perspective

Characterization and Modeling of Commercial ICs for System-Efficient ESD Design

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

A Scalable Model for Snapback Characteristics of Circuit-Level ESD Simulation

A Novel Multi-Pulse TLP Simulation for ESD Protection Device

Trigger voltage walk-in effect of ESD protection device in HVCMOS

SEED Modeling of an ESD Gun Discharge to a USB Cable Surrogate

Simulation Analysis for Fault States of 2.5 MV Electro-Magnetic Pulse Driver with Fast Rise Time