Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

A Novel Multi-Pulse TLP Simulation for ESD Protection Device

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Development of a TLP System with a Novel Current Sampling Technique for ESD Protection Applications

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

An enhanced TLP system for ESD characterization in semiconductor technologies

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

A novel gate-suppression technique for ESD protection.

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

A Novel SCR-LDMOS for High Voltage ESD Protection.

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

An Analysis Method of System-Level ESD Model with a TLP Stress Input

An Improved Test Methodology for Detecting One-Case Latent Damage in Inverter Circuit under ESD Pulses