Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

An Analysis Method of System-Level ESD Model with a TLP Stress Input

Simplified Modeling of the Power-electronized Load Based on Sensitivity Analysis

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

A Novel Tlp-Based Method To Deliver Iec 61000-4-2 Esd Stress

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Transient Analysis of Transmission Lines Loaded by Active Devices Illuminated by an Electro-Magnetic Pulse in the Indoor Environment

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

An Improved Test Methodology for Detecting One-Case Latent Damage in Inverter Circuit under ESD Pulses

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

An enhanced TLP system for ESD characterization in semiconductor technologies

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

A Novel Multi-Pulse TLP Simulation for ESD Protection Device

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Prediction of the ESD Failure Current Based on a New Method Using the Shot Noise Model

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology