Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Development of a TLP System with a Novel Current Sampling Technique for ESD Protection Applications

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

An enhanced TLP system for ESD characterization in semiconductor technologies

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

A Novel Multi-Pulse TLP Simulation for ESD Protection Device

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

A novel gate-suppression technique for ESD protection.

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Analysis Of Metal Routing Technique In A Novel Dual Direction Multi-Finger Scr Esd Protection Device

An Improved Test Methodology for Detecting One-Case Latent Damage in Inverter Circuit under ESD Pulses