Abstract:Optimizing electrostatic discharge (ESD) protection strategies requires simulation models of both <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on - and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -die ESD devices, but detailed information about <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -die ESD protection is rarely available. Methods are proposed in the following paper to characterize and model the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection using only measurements, with minimal <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a priori information about how the protection is implemented. The characterization targets a three-terminal (rather than the traditional two-terminal) protection structure, including the I/O, Vdd, Vss pins, and allows for current to flow between multiple pins simultaneously. A previously-developed behavioral model for TVS devices is used to capture the ESD behavior of the integrated circuit (IC), including its linear, quasi-static, and transient nonlinear response. The approach is used to model the equivalent current that flows through the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection of two commercial ICs. The model of the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection is combined with a behavioral model of an <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -chip transient voltage suppressor to demonstrate their combined performance in a system-efficient ESD design (SEED) simulation. The model is validated both when the IC is powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off and powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on . The SEED model was able to predict quasistatic and peak voltages and currents at the IC with less than a 10% error.

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Modeling Study of Power-On and Power-Off System-Level Electrostatic Discharge Protection

Field-Circuit Coupled Simulation With an Equivalent Circuit Model for High-Voltage Spark Gaps

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Characterization and Modeling of Commercial ICs for System-Efficient ESD Design

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