Abstract:Electrostatic discharge (ESD) is a critical factor affecting the reliability of advanced integrated circuit chips. Simulating device-level ESD in chips has become a challenging task due to the lack of a standardized physical model capable of characterizing a wide range of electrostatic stress conditions. This article introduces a novel passive hybrid ESD model, aiming to address this issue. The model greatly simplifies the calculation of nonlinear avalanche factor M and improves its convergence properties. In particular, the proposed modeling method simplifies parameter extraction and reduces modeling complexity and can achieve the device electrical characterization of direct-current (dc) breakdown, transient clamping, and I-V characteristics under different transmission line pulse (TLP) excitation conditions. We validated the effectiveness and accuracy of the proposed scheme using the 0.18- mu m standard bipolar-CMOS-DMOS (BCD) process. The passive hybrid ESD model is a custom modeling approach mainly used to achieve simple device-level simulation and limited device characteristic evaluation. However, its co-simulation with large-scale circuits still has limitations. Furthermore, the aforementioned modeling approach is applicable to various types of ESD structures. By adjusting the key parameters of the model, it becomes possible to characterize device properties under different structures and sizes.

A Robust Novel Technique for SPICE Simulation of ESD Snapback Characteristic

A Scalable Model for Snapback Characteristics of Circuit-Level ESD Simulation

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

A Passive Hybrid Circuit Model for Electrostatic Discharge (ESD) Characterization

A Novel SPICE Circuit Model of Electrostatic Discharge (ESD) Generator.

A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

A novel gate-suppression technique for ESD protection.

Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

A novel GGNMOS macro-model for ESD circuit simulation

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Fast transient electro-thermal simulation of on-chip interconnects in the presence of ESD pulses