System Efficient ESD Design of IO ESD Protection

Feifan Deng,Xinyu Zhu,Fangjun Yu,Yipeng Chen,Hongyu Shen,Shurong Dong

2022-01-01

Abstract:The failure mode often encountered in System Efficient ESD Design (SEED) is proposed based on a case, that is, the failure caused by the mismatch between the on-board TVS and the ESD Clamp in the chip. The paper presents the SEED method, and solves the practical problem with test verification.

What problem does this paper attempt to address?

Characterization and Modeling of Commercial ICs for System-Efficient ESD Design

Zhekun Peng,Yang Xu,Manje Yea,Sergej Bub,Steffen Holland,DongHyun Kim,David Pommerenke,Daryl G. Beetner

DOI: https://doi.org/10.1109/TEMC.2022.3217749

IF: 2.036

2022-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Optimizing electrostatic discharge (ESD) protection strategies requires simulation models of both <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on - and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -die ESD devices, but detailed information about <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -die ESD protection is rarely available. Methods are proposed in the following paper to characterize and model the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection using only measurements, with minimal <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a priori information about how the protection is implemented. The characterization targets a three-terminal (rather than the traditional two-terminal) protection structure, including the I/O, Vdd, Vss pins, and allows for current to flow between multiple pins simultaneously. A previously-developed behavioral model for TVS devices is used to capture the ESD behavior of the integrated circuit (IC), including its linear, quasi-static, and transient nonlinear response. The approach is used to model the equivalent current that flows through the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection of two commercial ICs. The model of the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on -chip ESD protection is combined with a behavioral model of an <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off -chip transient voltage suppressor to demonstrate their combined performance in a system-efficient ESD design (SEED) simulation. The model is validated both when the IC is powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off and powered- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on . The SEED model was able to predict quasistatic and peak voltages and currents at the IC with less than a 10% error.
System-Efficient ESD Design Based on a Modular Measurement System Applied to USB

Lucas Speckbacher,David Johannes Pommerenke,Gabriel Fellner,Lukas Pertoll,Harald Gossner

DOI: https://doi.org/10.1109/tim.2024.3497173

IF: 5.6

2024-11-29

IEEE Transactions on Instrumentation and Measurement

Abstract:A modular system-level electrostatic discharge (ESD) evaluation platform is described. It forms a flexible instrument that allows the investigation of the impact of various system-level and printed circuit board (PCB) ESD design choices. The transmission line pulse (TLP) and IEC 61000-4-2 pulse behavior of a universal serial bus (USB) 3.0 redriver IC protected by different transient voltage suppressors (TVSs) are investigated. The system includes modules with varying functionality which can be flexibly combined on a baseboard. IV curves, leakage current, S-parameters, USB data errors, and IC power consumption can be monitored to detect damage or soft-fail disturbances. We report on the ESD protection achieved with two types of TVS: TVS with and without snap-back characteristics. The measured voltages and currents are compared to a system-efficient ESD design (SEED) simulation. This modular system allows rapid implementation of complex experimental characterization setups to investigate system-level ESD response, providing essential input to improve design robustness using the SEED modeling concept.

engineering, electrical & electronic,instruments & instrumentation
A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design

Yuan Wang

DOI: https://doi.org/10.1109/edtm53872.2022.9798202

2022-01-01

Abstract:Based on system efficient electrostatic discharge design (SEED) methodology, this paper proposes a high-order SPICE simulation methodology to predict the performance of the ESD protection circuits. The related PCB-level experiments of the selected protection circuits are fulfilled to verify this method. As a result, the consistency of the comparison results between the simulation and measurement illustrates that the method can accurately predict the performance of system-level protection circuits.
SEED Modeling of an ESD Gun Discharge to a USB Cable Surrogate

Yang Xu,Jianchi Zhou,Daryl Beetner,Javad Meiguni,David Pommerenke,Sergej Bub,Steffen Holland

DOI: https://doi.org/10.1109/emc/si/pi/emceurope52599.2021.9559216

2021-01-01

Abstract:An IC protected by a transient voltage suppression (TVS) diode may fail if the TVS device does not turn on or does not turn on quickly enough, causing the IC to take the full brunt of the ESD event. System Efficient ESD Design (SEED) simulation can help predict when the TVS will turn on and the level of ESD stress seen by the IC. In the following paper, models are developed to predict the voltage and current through a TVS and on-chip protection diodes connected to a USB cable when an ESD gun discharges to a pin at the end of the cable. A hybrid simulation methodology is proposed, which uses a full-wave model of the ESD gun, cable, and enclosure combined with the ESD protection devices and test board's circuit-level models. The response of the ESD protection is studied in simulation and measurement for a variety of cable configurations. Simulations of the voltage and current waveforms match measurements 24-35%. The total charge delivered to the on-chip diode as a function of ESD gun voltage was predicted within 21%.
FOD Based ESD Protection Devices in Deep Sub-micron Technology

Kehan ZHU,Xiaoyang DU,Zongguang YU,Yan HAN,Qiang CUI,Mingxu HUO,Shurong DONG

DOI: https://doi.org/10.3969/j.issn.1000-3819.2009.01.023

2009-01-01

Abstract:Field oxide devices (FOD) based ESD (Electrostatic discharge) protection devices are investigated in this paper. According to different protected parts of IC chip such as input, output and power rails, three main FOD devices are fabricated in 0.18μm EEPROM silicide CMOS technology. By using TLP tester, the effects of the feature size on FOD's ESD characteristics and its design rule are analyzed. Results show that channel length and the distance between drain and contact (DCG) play a vital role. With increasing the channel length, trigger voltage is enhanced, but ESD robustness is weakened. Increasing DCG can enhance FOD ESD protection ability. A floating square poly island FOD is presented in this paper, which shows a simple structure and good ESD protection ability.
ESD Protection Issues in IC Design

CAO Yanjie,WANG Yong,ZHU Qi,HUA Mengqi,WU Haihong,ZHANG Yong

DOI: https://doi.org/10.3969/j.issn.1681-1070.2012.12.007

2012-01-01

Abstract:Electrostatic discharge(ESD) is one of the most important reliability issues in the integrated circuit(IC) industry,and nearly 40% of all IC failures are associated with ESD/EOS(electrical overstress) related modes.Therefore,controlling ESD is indispensable for achieving higher quality and reliability standards of IC chips.This paper presents ESD circuit and layout design of a chip.The chip is verified in 0.35μm 1P3M 5V cmos process and has passed HBM-3000V MM-300V ESD test.The chip’s ports can be divided into four categories: input port,output port,vdd and vss ports,open-drain output port.For achieving the goal of HBM3000V and MM-300V,a good ESD protection network must be selected firstly.The ESD solution relies on shunting charge from an I/O pin to a power supply,from which the charge can be distributed to other I/O pins.Secondly,good ESD protection circuit and devices are designed.At last,designing a good ESD protection layout is important.
On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

CUI Qiang,DOND Shu-rong,LIU Jun-jie,HAN Yan

DOI: https://doi.org/10.3969/j.issn.1007-4252.2008.01.036

2008-01-01

Abstract:An on -chip electrostatic discharge (ESD) protection scheme is demonstrated for an emerging technology of microelectromechanieal systems (MEMS) - based embedded sensor (ES) system - on - a - chip (SoC). The ESD protection scheme is implemented using ground - referenced muhifinger thyris- tor- type devices optimized for 1 ) the input/output (I/O) protection, 2) the power supply clamp, and 3) the internal sensors' electrodes during the micromachining process. A multiply finger layout scheme was also developed to the ESD protection level under the constraint of chip size. The ESD protection de- sign methodology was tested and verified at both the device and SoC levels, and its effectiveness and ro- bustness have been illustrated. Experimental results showed that the SoC passed a 4.1 kV Human Body Model ESD stress with no latchup induced and a very low leakage current of 10-10 A.
A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Yan Han,Shaoyu Ma,Qiang Cui,J.J. Liou,Shurong Dong

DOI: https://doi.org/10.1049/cp:20070677

2007-01-01

Abstract:On-chip electrostatic discharge (ESD) protection requires not only extensive technical experience but also scientific technology computer aided design (TCAD) methodology for evaluation. A novel and powerful TCAD methodology aimed to evaluate performance of ESD protection devices objectively is developed and presented. Mix-mode transient circuit simulation, which depicts ESD events better, is acquired in this simulation method. This TCAD methodology pays more attentions to the transient behaviors and characteristics of ESD protection devices which are more valuable to predict performance of ESD protection devices. This TCAD methodology with good ability of convergence can evaluate the performance of ESD protection devices scientificly and has strong direction ability to the design of ESD protection devices.
Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

Yize Wang,Yuan Wang,Yunhao Li,Ru Huang

DOI: https://doi.org/10.23919/emctokyo.2019.8893924

2019-01-01

Abstract:System efficient ESD design (SEED) is an effective method for simulating Electrostatic discharge (ESD) behaviors of a system. Based on this simulation method, this work investigates transient behaviors of a co-design protection circuit and failure of a hybrid-triggered power clamp under surge stress. In addition to utilization of transmission line pulsing (TLP) I-V curves, transient TLP waveforms are also used for building the component and device models in the co-design protection circuit. Moreover, the relevant measurements are included in this work for verifying the simulation results of the co-design protection circuit and failure analysis of the power clamp.
On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

H. Wong,S. Dong,Z. Chen

DOI: https://doi.org/10.1109/miel.2019.8889652

2019-01-01

Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.
New Electrostatic Discharge Protection Device for VBO High Speed Chip

Ze-kun XU,Hong-yu SHEN,Tao HU,Xiang LI,Shu-rong DONG

DOI: https://doi.org/10.3785/j.issn.1008-973x.2019.04.021

2019-01-01

Abstract:Two new electrostatic discharge (ESD) protection devices, gate diode and area-efficiency diode-trigger silicon controlled rectifier (SCR), were proposed in order to improve the performance of ESD protection devices on VBO interface circuit. Traditional diodes, gated diodes, and area-efficient SCR were fabricated based on SMIC 40 nm CMOS process and SMIC 28 nm PS CMOS process. The total current densities of those three structures were analyzed with the simulation of TCAD software. Ⅰ-Ⅴ characteristics of those ESD protection devices were measured by transmission line pulse (TLP) testing after tape-out. The gate diode's ESD robustness was 19.7 mA/μm, and on-resistance was 1.28 Ω with a 38.8% reduction compared to conventional diode. The trigger voltage of area-efficiency diode trigger SCR was 1.82 V and robustness of it was 48.1 mA/μm, which was a 174.8% improvement over conventional diode. The test results show that the performance of the gate diode and the ASCR is greatly improved compared to the conventional ESD device and is suitable to be the ESD device of VBO interface chip.
Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Qiang Cui,Shurong Dong,Juin J. Liou,Yan Han

DOI: https://doi.org/10.1109/NEMS.2008.4484282

2008-01-01

Abstract:Robustness performance is one of the most important concerns in the design of ESD (Electro-Static Discharge) protection devices, and this quality plays a more and more important role in NEMS protection devices. Improvement of robustness requires not only experience but also TCAD (Technology Computer Aided Design) methodology to evaluate ESD protection devices in NEMS. A novel TCAD methodology for robustness evaluation is presented and developed here. This methodology is based on mix-mode transient circuit simulation, and this simulation method depicts ESD events better. Through analyse of the time effect on power accumulation, an important key parameter, named as robustness coefficient, is provided to characterize and evaluate robustness performance of ESD protection devices quantificationally. Based on analyse of this robustness coefficient of different ESD devices under different ESD models and levels, the results show that this TCAD methodology has a good ability of convergence, and can be used to evaluate robustness performance of ESD protection devices objectively.
A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Fei Lu,Rui Ma,Zongyu Dong,Li Wang,Chen Zhang,Chenkun Wang,Qi Chen,X. Shawn Wang,Feilong Zhang,Cheng Li,He Tang,Yuhua Cheng,Albert Wang

DOI: https://doi.org/10.1109/tcsi.2016.2581839

2016-01-01

IEEE Transactions on Circuits and Systems I Regular Papers

Abstract:This paper discusses a systematic study of electrostatic discharge (ESD) protection circuit co-design and analysis technique for high-frequency and high-speed ICs in 28 nm CMOS. The comprehensive ESD-IC co-design flow includes ESD device optimization and characterization, ESD behavioral modeling, backend interconnect characterization, parasitic ESD parameter extraction, ESD failure analysis and ESD co-design evaluation for ICs operating at up to 15 GHz and 40 Gbps. Ring oscillator, dummy I/O buffer and current mode logic (CML) circuits were used to demonstrate the co-design method. This practical ESD-IC co-design technique can be applied to high-performance, high-frequency and high-speed ICs.
Mixed-mode simulation-design for IEC-ESD protection

fei yao,xin wang,shijun wang,bo qin,albert wang,hongyi chen,siqiang fan,bin zhao

DOI: https://doi.org/10.1109/ICSICT.2010.5667438

2010-01-01

Abstract:Electrostatic discharge (ESD) protection becomes essential to advanced integrated circuits (IC). Very fast IEC-ESD failure and protection design are emerging challenges for contemporary ICs, particularly for consumer and portable electronics. This paper presents a new mixed-mode IEC-ESD simulation-design method, which involves process, device, circuit and system level simulation to accurately address the ultra-fast IEC ESD phenomena. The new IEC-ESD design technique allows ESD design optimization and prediction. Experimental results are depicted to validate the new design technique.
Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Xiaoyang Du,Shurong Dong,Yan Han,Juin J. Liou,Mingxu Huo,You Li,Qiang Cui,Dahai Huang,Demiao Wang

DOI: https://doi.org/10.1016/j.microrel.2008.04.005

IF: 1.6

2008-01-01

Microelectronics Reliability

Abstract:Electrostatic discharge (ESD) protection design is challenging for RF integrated circuits (ICs) because of the trade-off between the ESD robustness and parasitic capacitance. ESD protection devices are fabricated using the 0.18-μm RF CMOS process and their RF ESD characteristics are investigated by the transmission line pulsing (TLP) tester. The results suggest that the silicon controlled rectifier (SCR) is superior to the diode and NMOS from the perspective of ESD robustness and parasitic, but the SCR nevertheless possesses a longer turn-on time.
ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

WU Peng,HE Le-nian,CHEN Xi

DOI: https://doi.org/10.3969/j.issn.1671-7147.2005.01.005

2005-01-01

Abstract:After analyzing the basic principle of Electrostatic Discharge,the limitation of traditional ESD protection circuits applied in high speed circuits was pointed out in the paper. Addition to the ggNMOS, ggPMOS connected the input and output, an on-chip protection with a high-speed discharge circuits between power source and ground was proposed. The simulation results indicate that this circuit can meet the ESD protection demand for USB2.0 high speed I/O design. The testing results also show that it can endure above 2500V in human-body model. This result has some practical meanings.
High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 Nm Process

Dongyan Zhao,Wei Guo,Yubo Wang,Jin Shao,Jiarui Li,Zhen Fu,Fang Liu,Zhenjiang Pang,Wenlong Zhao,Licheng Wang,Shulong Wang

DOI: https://doi.org/10.18494/sam3756

IF: 1.2

2022-01-01

Sensors and Materials

Abstract:As the characteristic size of semiconductor devices in ICs decreases, ICs are becoming more sensitive to electrostatic discharge (ESD). Electrostatic protection has become one of the most important reliability indexes in ICs, and the ESD protection structure has also become a difficult problem in chip design. A sensor exposed to static electricity can be damaged and its output signal can be disturbed. Therefore, electrostatic protection also plays an important role in sensors. As the scale of ICs increases, the number of chip pins is increasing and a larger area is being used for ESD protection circuits, resulting in higher costs. Silicon controlled rectifier (SCR) ESD protection devices have the highest performance per unit area among the known ESD protection structures, and are thus the first choice for low-cost, on-chip ESD design solutions. In this study, through a Sentaurus simulation, two SCRs with different structures (a directly connected SCR and a modified lateral SCR) are established, and transmission line pulse tests are carried out on the two devices. The key characteristic indexes are analyzed theoretically and by using experimental data. According to the simulation results, the opening voltage of the directly connected SCR is about 1.5 V and its secondary breakdown current is above 5 A, indicating that the device has a high protection level.
Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Qiang Cui,Shurong Dong,Juin J. Liou,Yan Han

DOI: https://doi.org/10.1109/EDSSC.2007.4450166

2007-01-01

Abstract:Speed performance plays a critical role in protection devices against ESD (Electro-Static Discharge) overstress under CDM (Charged Device Model). It is too demanding to obtain speed performance of protection devices under CDM accurately by testing. Therefore we have to resort to TCAD (Technology Computer Aided Design) method to evaluate speed performance under CDM. This TCAD methodology is based on mix-mode transient circuit simulation, which depicts ESD events better. Two time constants, Ttrigger and Trecover, and two key coefficients, Ftrigger and Crecover, are provided to characterize and evaluate speed performance of ESD protection devices. The results show that this TCAD methodology has a good ability of convergence and is a good tool to evaluate speed performance of ESD protection devices quantificationally. Anlayse results show that speed performance of SCR is superior over ggNMOS in not only triggering but also bypassing ESD currents to recover the voltage towards a safe level.
A Wafer-Level Characterization Method of Esd Protection Circuits for Both Component-Level and System-Level Applications

Yuan Wang,Guangyi Lu,Xing Zhang

DOI: https://doi.org/10.1109/apemc.2016.7522781

2016-01-01

Abstract:Electrostatic discharge (ESD) protection circuits are often designed with detection circuits to trigger clamp devices to bypass ESD currents. In order to fully characterize performance of these protection circuits, a wafer-level characterization method is proposed in this work. By separating the detection rail from the supply rail, triggering actions resulted from detection circuits can be clearly captured by the proposed method. Besides, both the component-level triggering criteria and system-level transient-induced latch-up (TLU) immunity of ESD protection circuits can be fully characterized by the proposed method. Silicon-data based case studies are presented in this work to verify the validity of the proposed method.
Novel Electrostatic Discharge Protection Design Method

Wang Yuan,Chen Zhongjian,Jia Song,Lu Wengao,Fu Yiling,Ji Lijiu

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.07.031

2007-01-01

Chinese Journal of Semiconductors

Abstract:A novel ESD protection design method is proposed instead of the traditional experience-based trial-and-error electrostatic discharge (ESD) design approach.The new method resolves the costly and time-consuming problems of high-performance ESD protection development in sub/deep-sub micron CMOS technology.The method is conducted and verified in a 0.5μm CMOS process to accomplish I/O cell design of a CMOS ASIC library,whose human-body-model ESD level can be greater than 5kV.

System Efficient ESD Design of IO ESD Protection

Characterization and Modeling of Commercial ICs for System-Efficient ESD Design

System-Efficient ESD Design Based on a Modular Measurement System Applied to USB

A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design

SEED Modeling of an ESD Gun Discharge to a USB Cable Surrogate

FOD Based ESD Protection Devices in Deep Sub-micron Technology

ESD Protection Issues in IC Design

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

New Electrostatic Discharge Protection Device for VBO High Speed Chip

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Mixed-mode simulation-design for IEC-ESD protection

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

High-performance Electrostatic Discharge Protection Device for Power Chip Based on 28 Nm Process

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

A Wafer-Level Characterization Method of Esd Protection Circuits for Both Component-Level and System-Level Applications

Novel Electrostatic Discharge Protection Design Method