Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

System-Efficient ESD Design Based on a Modular Measurement System Applied to USB

System Efficient ESD Design of IO ESD Protection

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

A Novel and Powerful TCAD Methodology to Evaluate Performance of ESD Protection Devices

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

A SPICE-Based Simulation Method for System Efficient Electrostatic Discharge Design

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

A Case Study of Problems in JEDEC HBM ESD Test Standard

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Investigation of Problems in JEDEC HBM ESD Test Standard

Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-scale Integrated Circuits

A bit error rate measurement system for LVDS signal transmission based on USB interface

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Mixed-mode simulation-design for IEC-ESD protection

A Wafer-Level Characterization Method of Esd Protection Circuits for Both Component-Level and System-Level Applications

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices