Abstract:Robustness performance is one of the most important concerns in the design of ESD (Electro-Static Discharge) protection devices, and this quality plays a more and more important role in NEMS protection devices. Improvement of robustness requires not only experience but also TCAD (Technology Computer Aided Design) methodology to evaluate ESD protection devices in NEMS. A novel TCAD methodology for robustness evaluation is presented and developed here. This methodology is based on mix-mode transient circuit simulation, and this simulation method depicts ESD events better. Through analyse of the time effect on power accumulation, an important key parameter, named as robustness coefficient, is provided to characterize and evaluate robustness performance of ESD protection devices quantificationally. Based on analyse of this robustness coefficient of different ESD devices under different ESD models and levels, the results show that this TCAD methodology has a good ability of convergence, and can be used to evaluate robustness performance of ESD protection devices objectively.

Co-design of ESD protection and LNA in RFIC

Whole Chip ESD Protection Design for 2.4 GHz LNA

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Whole Chip Esd Protection for 2.4 Ghz Lna

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Co-design of ESD Protection and UWB RF Front-End ICs

A design technique overview on broadband RF ESD protection circuit designs

Electrostatic Discharge Protection for RF Integrated Circuits: New ESD Design Challenges

Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI

Low-parasitic ESD Protection Strategy for RF ICs in 0.35μm CMOS Process

Low-Capacitance SCR Structure for RF I/O Application

A 5kv Esd-Protected 2.4ghz Pa in 180nm Rfcmos Optimized by Esd-Pa Co-Design Technique

Robustness Evaluation Of Esd Protection Devices In Nems Using A Novel Tcad Methodology

Improvement on Diode String Structure for 65-Nm RF ESD Protection

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

Novel Electrostatic Discharge Protection Design Method

An ESD-Aware 2.4 GHz PA Design for WLAN Application

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

Frequency-Response-Oriented Design and Optimization of N+ Diffusion Guard Ring in Lightly Doped CMOS Substrate