Abstract:InxGa1-xAs devices have been widely researched for low power high frequency applications due to the outstanding electron mobility and small bandgap of the materials. Regrown source/drain technology is highly appreciated in InGaAs MOSFET, since it is able to reduce the thermal budget induced by ion implantation, as well as reduce the source/drain resistance. However, regrown source/drain technology has problems such as high parasitic capacitance and high electric field at gate edge towards the drain side, which will lead to large drain leakage current and compromise the frequency performance. To alleviate the drain leakage current problem for low power applications and to improve the high frequency performance, a novel Si3N4 sidewall structure was introduced to the InGaAs MOSFET. Device simulation was carried out with different newly proposed sidewall designs. The results showed that both the drain leakage current and the source/drain parasitic capacitance were reduced by applying Si3N4 sidewall together with InP extended layer in InGaAs MOSFET. The simulation results also suggested that the newly created "recessed" sidewall was able to bring about the most frequency favorable characteristic with no current sacrifice.

Frequency-Response-Oriented Design and Optimization of N+ Diffusion Guard Ring in Lightly Doped CMOS Substrate

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

The Investigation of the Substrates Noise Suppression Using Guard Rings in CMOS Technology

On-chip EMC issue: the implementation of patterned ground shields for silicon devices

P-minus substrate guard ring modeling for the purpose of noise isolation in CMOS substrates

Circuits Design for Contactless Testing of Nano-Scale CMOS Devices and Circuits

A 28 GHz LNA using defected ground structure for 5G application

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

A Cmos-Compatible Silicon Substrate Optimization Technique And Its Application In Radio Frequency Crosstalk Isolation

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

A Novel 3-D Frequency Selective Structure for Radiation Leakage Suppression in Sub-6G Highly Integrated Package

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Effective Crosstalk Isolation With Post-CMOS Selectively Grown Porous Silicon Technique for Radio Frequency System-on-Chip (SOC) Applications

A Systematic Study of ESD Protection Co-Design with High-Speed and High-Frequency ICs in 28 Nm CMOS.

Design of a Dual-Material Gate LDMOS

Optimization of RF Performance and Reliability of 28V RF-LDMOS

Patterned Dual pn Junctions Restraining Substrate Loss of an On-Chip Inductor

Combined Effects of Guard Rings and Buried N(+) Layer on Mitigating Charge Collection and Charge Sharing in 90 Nm Cmos Process