A 28 GHz LNA using defected ground structure for 5G application

Jiang Luo,Jin He,Hao Wang,Sheng Chang,Qijun Huang,Xiao Peng Yu
DOI: https://doi.org/10.1002/mop.31112
IF: 1.311
2018-01-01
Microwave and Optical Technology Letters
Abstract:In this article, a defected ground structure (DGS) is proposed to replace the inductor placed between common source and common gate stage in cascode low-noise amplifier (LNA), leading to silicon area reducing as well as good internal matching condition. For verification, a 28 GHz three-stage cascode LNA with DGS is designed and implemented in a 130-nm CMOS technology. The fabricated prototype achieves a peak gain of 20 dB and minimum noise figure of 5.2 dB. The LNA occupies small silicon area of only 0.12 mm(2) excluding testing pads, and it draws a current of 16 mA from a 1.5 V supply voltage.
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