Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect
Wentong Zhang,Junqing He,Shikang Cheng,Sen Zhang,Boyong He,Ming Qiao,Zhaoji Li,Bo Zhang
DOI: https://doi.org/10.1109/led.2020.3009994
IF: 4.8157
2020-09-01
IEEE Electron Device Letters
Abstract:A novel self-modulated superjunction lateral double-diffused MOSFET (SM-SJ LDMOS) is proposed and experimentally realized in this letter. When a SJ is introduced into a lightly doped N-drift region, the 3-D depletion regions appear surrounding the P-pillars. This 3-D junction field effect transistor (JFET) effect decreases the current paths in both N-pillars and N-drift, causing a largely increased specific on-resistance ${R} _{text {on,sp}}$ especially for the SJ with a narrow cell pitch. To suppress the inherent 3-D JFET effect, the SM-SJ structure is proposed by replacing the P-pillars with a series of P-islands. These P-islands with linearly reduced lengths modulate the surface electric field to increase the breakdown voltage ${V} _{{text {B}}}$ while the N-drift areas between P-islands weaken the 3-D JFET effect to reduce ${R} _{text {on,sp}}$ . Compared with the conventional SJ device, the measured ${V} _{text {B}}$ of the SM-SJ LDMOS is increased by 53.1% from 260 V to 398 V with ${R} _{on,sp}$ reduced by 22.3% from 35.4 $text{m}Omega ~cdot $ cm<sup>2</sup> to 27.5 $text{m}Omega ~cdot $ cm<sup>2</sup>.
engineering, electrical & electronic