Abstract:Since the dual directional silicon controlled rectifier (DDSCR) can not meet the requirement of the narrow electrostatic discharge (ESD) design window in integrated circuits with progressively decreasing feature sizes, an ESD protection device of PMOS-embedded gate-floating DDSCR (GFDDSCR) was designed and fabricated based on the 0.5 μm Bipolar-CMOS-DMOS process. The ESD characteristics of GFDDSCR devices with different key dimensions were studied by transmission line pulse testing, and their unit area ESD protection ability was calculated. The structure parameters of GFDDSCR were optimized by investigating the effects of key dimensions on the ESD characteristics. Results show that, compared with the improved bi-directional silicon controlled rectifier (IBDSCR), the optimized GFDDSCR has a small change in the holding voltage and the failure current, a lower trigger voltage decreased by about 27%, and a narrower voltage snapback margin decreased by about 53%. As a result, the optimized GFDDSCR can meet the requirement of the narrow ESD design window in micro-nano scaled integrated circuits.

Design of A Gate-Coupled Electrostatic Discharge Protection Structure

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

A Pad-Oriented Novel Electrostatic Discharge Protection Structure For Mixed-Signal ICs

A novel gate-suppression technique for ESD protection.

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Novel Gate-Voltage-Bias Techniques For Gate-Coupled Mos (Gcmos) Esd Protection Circuits

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Ggnmos As Esd Protection in Different Nanometer Cmos Process

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

Novel Electrostatic Discharge Protection Design Method

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

New Electrostatic Discharge Protection Device for VBO High Speed Chip

ESD protection design of DDSCR structure based on the 0.5 BCD process

FOD Based ESD Protection Devices in Deep Sub-micron Technology

A Design Model Of Gate-Coupling Nmos Esd Protection Circuit

A Novel Bg-Triggered Ggnmos Structure For Fd-Soi Esd Protection

ESD Protection of NMOS Device at Different Gate Bias