A Design Model Of Gate-Coupling Nmos Esd Protection Circuit

W Yuan,J Song,Zj Chen,Gg Zhang,Lj Ji

2004-01-01

Abstract:A design model is proposed to exactly simulate operating principles of oate-coupling NMOS (GCNMOS) ESD protection circuit under ESD. stress. Using this model, adequate coupling capacitor C-n and coupling resistor R-n can be calculated to improve the efficiency of GCNMOS ESD protection circuit.

What problem does this paper attempt to address?

A design model of gate-coupling NMOS ESD protection circuit

Wang Yuan,Jia Song,Chen Zhongjian,Zhang Ganggang,Ji Lijiu

DOI: https://doi.org/10.1109/ICSICT.2004.1436642

2004-01-01

Abstract:A design model is proposed to exactly simulate operating principles of gate-coupling NMOS (GCNMOS) ESD protection circuit under ESD stress. Using this model, adequate coupling capacitor Cn and coupling resistor Rn can be calculated to improve the efficiency of GCNMOS ESD protection circuit.
Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

S. Dong,X. Du,Y. Han,M. Huo,Q. Cui,D. Huang

DOI: https://doi.org/10.1049/el:20081073

2008-01-01

Electronics Letters

Abstract:Because of its simple structure and snapback characteristics, the grounded-gate NMOS (GGNMOS) has been widely used as an electrostatic discharge (ESD) protection device. ESD performance of GGNMOS fabricated in the 65 nm CMOS process is investigated, and measurement results for the snapback behaviour, failure current I-t2, holding voltage, and trigger voltage of such advanced MOS devices are illustrated. The effects of four key GGNMOS parameters, channel length, finger number, drain-to-gate spacing and source-to-gate spacing on the ESD performance, are considered, and optimal MOS structures for robust ESD protection applications are suggested.
Design of A Gate-Coupled Electrostatic Discharge Protection Structure

Wang Yuan,Jia Song,Sun Lei,Zhang Gang-Gang,Zhang Xing,Ji Li-Jiu

DOI: https://doi.org/10.7498/aps.56.7242

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:A novel gate-coupled electrostatic discharge (ESD) protection structure, called bonding-pad capacitance gate-coupled device, is designed. The new structure solves the problem of the traditional gcMOS device not being able to give correct transient response to some specific ESD events. The device layout area is also reduced. The measured results show that the novel structure has a 26%-41% layout area reduction and a high ESD robustnesss greater than 8 kV in a standard 0.5 mu m single poly triple metal complementary metal-oxide-semiconductor process.
ESD Protection of NMOS Device at Different Gate Bias

ZHU Ke-han,DONG Shu-rong,HAN Yan,DU Xiao-yang

DOI: https://doi.org/10.3785/j.issn.1008-973x.2010.01.025

2010-01-01

Abstract:In salicided sub-micron CMOS technology, the electrostatic discharge (ESD) performance of NMOS device as the self-protected output buffer at uncertain gate bias was analyzed. NMOS device struc-tures for ESD protection were designed and fabricated in a 0.35 μm CMOS process. Their ESD abilities were measured by a transmission line pulse (TLP) testing system at different gate bias. With ISE-TCAD, the electric field density distribution of the device at different gate bias was shown by transient simulation. The results show that the gate bias can degrade the second breakdown current because of more current flow at the surface of NMOS device. When designing the snapback based gate coupled NMOS ESD protec-tion device, the RC time constant of trigger-assisting circuit should be controlled around 50 ns.
Novel Gate-Voltage-Bias Techniques For Gate-Coupled Mos (Gcmos) Esd Protection Circuits

Guangyi Lu,Yuan Wang,Jian Cao,Song Jia,Ganggang Zhang,Xing Zhang

DOI: https://doi.org/10.1109/asicon.2013.6811960

2013-01-01

Abstract:Two gate-voltage-bias techniques for gate-coupled MOS (gcMOS) electrostatic discharge (ESD) protection circuits are proposed in this paper. The proposed techniques bias the gate voltage of discharging transistor to approximately half of its drain voltage during an ESD event through either subtraction circuit elements or division circuit elements in order to achieve highest second breakdown current (I-t2) levels. Besides, leakage current levels of protection circuits with proposed gate-voltage-bias techniques are verified to be smaller than that of the traditional design.
A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Xiaotian Chen,Yuan Wang,Lizhong Zhang,Ru Huang

DOI: https://doi.org/10.23919/emctokyo.2019.8893661

2019-01-01

Abstract:A novel gate-coupled NMOS (gcNMOS) structure for electrostatic discharge (ESD) protection is proposed in this paper, which can be realized in an advanced 22-nm full-depleted silicon-on-isolation (FD-SOI) technology. The triggering voltage of the proposed device structure can be adjusted to meet different ESD requirements. This innovative configuration is characterized by the resistance used to connect the gate and the ground as well as the double-well under the buried oxide (BOX), which can alter the gate potential and the electron density of the channel. Compared with previous structures, the triggering voltage of the proposed structure can range in a large scale without additional silicon consumption.
Ggnmos As Esd Protection in Different Nanometer Cmos Process

Weihuai Wang,Shurong Dong,Lei Zhong,Jie Zeng,Zhihui Yu,Zhiwei Liu

DOI: https://doi.org/10.1109/edssc.2014.7061085

2014-01-01

Abstract:Grounded-gate NMOS (GGNMOS) plays a more important role in electrostatic discharge (ESD) protection because of its simple structure and low trigger voltage. Various GGNMOS based on 90nm, 65nm and 40nm CMOS process are compared to investigate its ESD characteristic changes with process advancing. Results show that the key parameters, including channel width and length, have great influence on its ESD metrics.
Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Le Zhang,Er-Ping Li,Xiao-Peng Yu,Ran Hao

DOI: https://doi.org/10.1109/temc.2016.2629702

IF: 2.036

2017-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:This paper presents a series of scalable equivalent circuits using an analytical method describing the electromagnetic coupling in the lightly doped CMOS substrate and the isolation structures such as the implanted guard ring. Implemented in Grace Semiconductor Manufacturing Corporation (GSMC) generic 0.13-mu m RF CMOS technology, the measurement and full-wave simulation are carried out to verify the proposed models in a broad frequency band ranging from 100 MHz to 40 GHz. By analyzing these layout-dependant models in detail, some layout and substrate characteristics impacting on guard ring performance are concluded and the design flow with guidelines for the guard ring structures implementation in engineering practice for RF signal isolation are presented.
ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

WU Peng,HE Le-nian,CHEN Xi

DOI: https://doi.org/10.3969/j.issn.1671-7147.2005.01.005

2005-01-01

Abstract:After analyzing the basic principle of Electrostatic Discharge,the limitation of traditional ESD protection circuits applied in high speed circuits was pointed out in the paper. Addition to the ggNMOS, ggPMOS connected the input and output, an on-chip protection with a high-speed discharge circuits between power source and ground was proposed. The simulation results indicate that this circuit can meet the ESD protection demand for USB2.0 high speed I/O design. The testing results also show that it can endure above 2500V in human-body model. This result has some practical meanings.
A novel GGNMOS macro-model for ESD circuit simulation

Chao Jiao,Zhiping Yu

IF: 1.019

2009-01-01

Chinese Journal of Electronics

Abstract:A novel macro-model for ESD circuit simulation with only five fitting parameters is proposed. In this model a new topology and a new multiplication factor equation are proposed as well as the extracting method. This modeling approach greatly reduces time and effort required for circuit design while making use of GGNMOS (Gate-grounded NMOS) as ESD (Electrostatic discharge) protection, which is widely used for integrated circuits to protect IOs and power rails. The DC characteristics of GGNMOS and transient behavior of GGNMOS under HBM (Human body model) stress are simulated using both our macro-model and two-dimensional device simulator, Taurus (Synopsys). Good agreement has been obtained.
Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

Feilong Zhang,Chenkun Wang,Fei Lu,Qi Chen,Cheng Li,Albert Wang,Daguang Li,Shaofeng Yu,Chengyu Zhu,Tianshen Tang,Yuhua Cheng

DOI: https://doi.org/10.1109/ipfa.2017.8060145

2017-01-01

Abstract:Lack of accurate ESD device models and CAD methods makes on-chip ESD protection circuit design optimization and verification impossible. This paper reports a new circuit-level ESD protection simulation method using ESD behavior models to quantitatively analyze the ESD discharging functions at chip level, including checking the transient node voltage and branch current on a chip during ESD events. The new ESD circuit simulation method is validated using ICs designed and fabricated in 28nm CMOS.
A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

qiang cui,yan han,j j liou,shurong dong,ruijun si,cheng peng

DOI: https://doi.org/10.1109/HDP.2007.4283600

2007-01-01

Abstract:A method to exact the electrical parameters and model the "second breakdown" action of MOSFET's under ESD (Electro-Static Discharge) on circuit-level, using TCAD simulation, is presented. MOSFET is one of the most important ESD protection devices, and is widely used as I/O protection device in integrated circuits. The avalanche breakdown of the MOSFET can be simulated by TCAD tools and the circuit-level model has been presented. However, accurate modeling and insightful analyzing of the "second breakdown" action, which leads to the permanent failure of the MOSFET, is rarely reported. We present an accurate macro model of the MOSFET based on deep analyzing of the physical mechanism of the "second breakdown", using TCAD simulation. This macro model owns fine convergency and accuracy which are of importance to the simulation of the ESD protection ability of the ESD protection network on circuit and system level.
Predictive Modeling of Capacitance and Resistance in Gate-All-around Cylindrical Nanowire MOSFETs for Parasitic Design Optimization

Qiumin Xu,Jibin Zou,Jieyin Luo,Runsheng Wang

DOI: https://doi.org/10.1109/icsict.2010.5667822

2010-01-01

Abstract:This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow source/drain extension (SDE) doping profile. The proposed non-iterative electrostatic model is successfully verified, and can be used to predict nanowire-based circuit performance. Based on the analytical model, we can further examine which parasitic components are affecting the delay. Results revealed that Cside, Cof, Rsd, RQ are dominant factors and should be treated as a major design concern. Among all the parameters, Lsd, Tg and Ndop are essentially important in parasitic design optimization. By selectively modifying these parameters, parasitic effect is evidently reduced.
Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Ming X. Huo,Koubao Ding,Yan Han,Shurong Dong,Xiaoyang Du,Dahai Huang,Bo Song

DOI: https://doi.org/10.1109/IPFA.2009.5232711

2009-01-01

Abstract:The popular electrostatic discharge (ESD) protection device, multi-finger NMOS with gate-coupling technique for better uniform turning-on, can be affected by process variation. The transmission line pulsing (TLP) test results reveal this phenomenon. The trigger voltage of the same pin on some products shifts from 9.5 V to 15.5 V. No such significant difference was ever reported in the literature. In this study, the circuit simulations at various process corners are applied to study the snapback device under this situation. With only the NMOS gate-drain overlap as coupling capacitance, the gate-to-ground resistor plays a vital role in counteracting the variation. When increased from 3 Kohm to 12 Kohm, the turn-on voltage is reduced and the target ESD performance is achieved. The protection structure is processed on an EEPROM process, which is used as both I/O protection circuit and power-clamp. It is able to pass 4 kV HBM ESD level.
Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

Jiahong Du,Caien Sun,Qiuyi Tang,Bomin Jiang,Zezheng Dong,Xinke Wu,Shu Yang

DOI: https://doi.org/10.1109/ispsd57135.2023.10147460

IF: 5.967

2024-01-01

IEEE Transactions on Power Electronics

Abstract:In this work, an efficient switching transient analytical model is proposed for P-GaN gate HEMTs, in which the dynamic gate capacitance $C_{\mathrm{G}}(V_{\text{DS}},\ V_{\text{GS}})$ characteristics during switching transient has been taken into consideration. Meanwhile, the modeling of external inductance, PCB, driver IC and surface mounting technology (SMT) components in the double-pulse characterization platform are taken into consideration. The proposed dynamic capacitance model is validated by the $C-V$ measurements. Consequently, the switching transient analytical model featuring dynamic gate capacitance characteristics can yield improved accuracy, in comparison with the conventional approach with merely static gate capacitance model.
A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

H Xie,R Zhan,H Feng,G Chen,A Wang,R Gafiteanu

DOI: https://doi.org/10.1109/CICC.2004.1358788

2004-01-01

Abstract:Electrostatic discharge (ESD) is a serious IC reliability problem. On-chip ESD protection are used to protect ICs against ESD damages. [1] This paper presents a real 3D mixed-mode ESD protection circuit simulation-design methodology for ESD design prediction. Practical ESD protection design examples in 0.35mum BiCMOS are given.
Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Guangyi Lu,Yuan Wang,Xing Zhang

DOI: https://doi.org/10.1587/transele.E99.C.590

2016-01-01

IEICE Transactions on Electronics

Abstract:Layout strategies including source edge to substrate space (SESS) and inserted substrate-pick stripes of gate-grounded NMOS (ggNMOS) are optimized in this work for on-chip electrostatic discharge (ESD) protection. In order to fully investigate influences of substrate resistors on triggering and conduction behaviors of ggNMOS, various devices are designed and fabricated in a 65-nm CMOS process. Direct current (DC), transmission-line-pulsing (TLP), human body model (HBM) and very-fast TLP (VF-TLP) tests are executed to fully characterize performance of fabricated ggNMOS. Test results reveal that an enlarged SESS parameter results in an earlier triggering behavior of ggNMOS, which presents a layout option for subtle adjustable triggering behaviors. Besides, inserted substrate-pick stripes are proved to have a bell-shape influence on the ESD robustness of ggNMOS and this bell-shape influence is valid in TLP, HBM and VF-TLP tests. Moreover, the most ESD-robust ggNMOS optimized under different inserted substrate-pick stripes always achieves a higher HBM level over the traditional ggNMOS at each concerned total device-width. Physical mechanisms of test results will be deeply discussed in this work.
Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Jianfeng Zheng,Jian Wu,Cheng-gong Han,Kehan Zhu

DOI: https://doi.org/10.1016/j.microrel.2011.11.011

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:This paper presents device optimization and physical analysis based on gate-grounded NMOS (GGNMOS) and n-channel lateral DMOS (nLDMOS) devices manufactured in a 0.35μm 5V/30V high-voltage BCD process. The multiple body pick-up technique has been investigated in detail for the GGNMOS, and the robustness and effectiveness of the LDMOS device is optimized by tuning the drain contact to gate space (DCGS) and increasing the body resistance. Finally, the trigger voltage walk-in effect is observed for the nLDMOS device and is studied by comprehensive simulation and TLP tests.
A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

ZHENG Jianfeng,HAN Yan,MA Fei,DONG Shurong,MIAO Meng,WU Jian,ZENG Jie

DOI: https://doi.org/10.3969/j.issn.1004-3365.2012.06.031

2012-01-01

Abstract:A novel structure of substrate-optimized GGNMOS for on-chip ESD protection was proposed to protect ultra-thin gate oxide effectively in nanometer IC process.With increased substrate resistance and pumped substrate trigger current by using power bus line controlled assisted-PMOS,the device was designed and implemented in 65 nm CMOS process.Compared with traditional GGNMOS,the proposed novel structure featured a significantly reduced trigger voltage of 3 V and an enhanced uniform conduction of multi-fingers,which improved failure current by 23.5%.
A novel power-clamp assisted complementary MOSFET for robust ESD protection.

Jian Wu,Shurong Dong,Mingliang Li,Meng Miao,Fei Ma,Jianfeng Zheng,Yan Han

DOI: https://doi.org/10.1016/j.microrel.2011.10.013

IF: 1.6

2012-01-01

Microelectronics Reliability

Abstract:A novel power-clamp assisted complementary MOSFET (PCACMOS), modified from traditional gate-coupled complementary MOSFET (GCCMOS), is proposed for high robust ESD (Electrostatic discharge) protection application. The power-clamp achieves by RC-NMOS and designs by Spice simulation. The comprehensive performance of the protection schemes are evaluated by the figure of merit (FOM). Compared with traditional gate-coupled MOSFET (GCCMOS) protection scheme, the power-clamp assisted complementary MOSFET (PCACMOS) protection scheme has a similar turn-on speed but higher FOM.

A Design Model Of Gate-Coupling Nmos Esd Protection Circuit

A design model of gate-coupling NMOS ESD protection circuit

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Design of A Gate-Coupled Electrostatic Discharge Protection Structure

ESD Protection of NMOS Device at Different Gate Bias

Novel Gate-Voltage-Bias Techniques For Gate-Coupled Mos (Gcmos) Esd Protection Circuits

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

A novel GGNMOS macro-model for ESD circuit simulation

Circuit-level ESD Protection Simulation Using Behavior Models in 28nm CMOS

A Method To Model Mosfet'S Second Breakdown Action For Circuit-Level Esd Simulation

Predictive Modeling of Capacitance and Resistance in Gate-All-around Cylindrical Nanowire MOSFETs for Parasitic Design Optimization

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

A 3d Mixed-Mode Esd Protection Circuit Simulation-Design Methodology

Optimization On Layout Strategy Of Gate-Grounded Nmos For On-Chip Esd Protection In A 65-Nm Cmos Process

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

A novel power-clamp assisted complementary MOSFET for robust ESD protection.