Abstract:The popular electrostatic discharge (ESD) protection device, multi-finger NMOS with gate-coupling technique for better uniform turning-on, can be affected by process variation. The transmission line pulsing (TLP) test results reveal this phenomenon. The trigger voltage of the same pin on some products shifts from 9.5 V to 15.5 V. No such significant difference was ever reported in the literature. In this study, the circuit simulations at various process corners are applied to study the snapback device under this situation. With only the NMOS gate-drain overlap as coupling capacitance, the gate-to-ground resistor plays a vital role in counteracting the variation. When increased from 3 Kohm to 12 Kohm, the turn-on voltage is reduced and the target ESD performance is achieved. The protection structure is processed on an EEPROM process, which is used as both I/O protection circuit and power-clamp. It is able to pass 4 kV HBM ESD level.

Novel Gate-Voltage-Bias Techniques For Gate-Coupled Mos (Gcmos) Esd Protection Circuits

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

A novel gate-suppression technique for ESD protection.

ESD Protection of NMOS Device at Different Gate Bias

Design of A Gate-Coupled Electrostatic Discharge Protection Structure

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

A Novel Gate-Coupled NMOS (gcnmos) for FD-SOI ESD Protection

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

A design model of gate-coupling NMOS ESD protection circuit

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

Input ESD protection circuit design with special considerations for gate oxide protection in nanoscale technologies

A novel power-clamp assisted complementary MOSFET for robust ESD protection.

A voltage controlled current source gate drive method for IGBT devices

The gate-bias influence for ESD characteristic of NMOS