Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.

Input ESD protection circuit design with special considerations for gate oxide protection in nanoscale technologies

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

A novel gate-suppression technique for ESD protection.

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

FOD Based ESD Protection Devices in Deep Sub-micron Technology

An Overview of ESD Protection in Nanometer IC

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Design of A Gate-Coupled Electrostatic Discharge Protection Structure

ESD Protection for mixed-voltage I/O Interfaces Based on STNMOS

Novel Electrostatic Discharge Protection Design Method

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Programmable On-Chip Esd Protection Using Nanocrystal Dots Mechanism And Structures

Whole Chip Esd Protection for 2.4 Ghz Lna

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Novel Gate-Voltage-Bias Techniques For Gate-Coupled Mos (Gcmos) Esd Protection Circuits

A Novel ESD Protection Structure for Output Pads

New Electrostatic Discharge Protection Device for VBO High Speed Chip