Abstract:For IC products, the I/O pins of CMOS integrated circuits (ICs) must be verified by latch-up I-test with the JEDEC JESD78F.01 standard. The high-voltage (HV) circuits and the low-voltage (LV) circuits have been integrated together in a single chip by the Bipolar-CMOS-DMOS (BCD) technology. The LV circuits were often surrounded by the n-type buried layer (NBL) isolation ring from the common p-type substrate. In the mixed-voltage IC, a parasitic latch-up path exists from the 5 V-tolerant I/O to NBL isolation ring in a 0.18- BCD technology, which will cause the IC products failed to pass the latch-up I-test. In this work, a new isolation ring with embedded Schottky-barrier diode (SBD) was proposed and verified to overcome such a latch-up issue. According to the silicon results, the proposed Schottky-embedded isolation ring can significantly increase the holding voltage of the parasitic latch-up path. The potential latch-up danger from the 5 V-tolerant I/O to NBL isolation ring can be fully solved by the proposed Schottky-embedded isolation ring. In addition, the proposed Schottky-embedded isolation ring is fully process-compatible to the 0.18- BCD technology without additional mask layer adding into the process flow.

Static CMOS Latch-Up Considerations in HVIC Design

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

Research Of Designing For The High Voltage Device In Cmos Hv-Ic

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

Monolithic Integration of 5-V Cmos and High-Voltage Devices

Design and Implementation of HV-PMOS for PDP Scan Driver IC

Physics-based Analytical Modeling of CMOS Latchup

A new criterion for transient latchup analysis in bulk CMOS

Analysis of CMOS-compatible Lateral Insulated Base Transistors

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

Novel ESD Protection Design Methodology and Latchup Prevention for a 0.5-&Amp;#956;m CMOS ASIC Library

CMOS Compatible Shorted Anode Auxiliary Cathode Lateral Insulated Gate Bipolar Transistors

Negative Triggering Current Induced the Latch-up in the Circuit without the ESD device to Power

Transient latchup characteristics in n-well CMOS

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Impact of TSV location in HVIC on CMOS operation: A mixed-mode TCAD simulation study

Cost-Efficient Solution to Overcome Latch-Up Path in 5 V-Tolerant I/O With Low-Voltage Biased NBL Isolation Ring in a 0.18-μm BCD Technology

Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies

An experimental extracted model for latchup analysis in CMOS process

Research on single event latch-up effect of CMOS based on TCAD

Fabrication of Thin Gate Oxide High-Voltage CMOS