Abstract:One of the ultimate CMOS structures can be the combination of III-V nMOSFETs and Ge pMOSFETs, because of high mobility and low effective mass. In order to realize III-V/Ge CMOS, common gate stack and source/drain (S/D) formation technologies are important. Here, an atomic layer deposition (ALD) Al2O3 gate insulator and Ta metal gate were used for common gate stacks for InGaAs and Ge. This is because ALD Al2O3 can provide good MOS interfaces with InGaAs as well as Ge with post electron cyclotron resonance (ECR) plasma oxidation. Also, self-aligned Ni-Ge and Ni-InGaAs, which can be formed simultaneously for InGaAs nMOSFETs and Ge pMOSFETs, were used as the metal S/D regions. By utilizing these technologies, we have demonstrated successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on the same wafer. In order to realize the integration of III-V/Ge MOSFETs, we have bonded III-V substrates with Ge substrates. We have found good transistor operation in both devices. High I-on/I-off ratio of similar to 10(6) was obtained for InGaAs-OI nMOSFETs. The high electron and hole mobility of 1800 and 260 cm(2)/Vs and the mobility enhancement against Si of 3.5x and 2.3x have been demonstrated for InGaAs-OI nMOSFETs and Ge pMOSFETs, respectively.

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