Abstract:The dual-gate inversion layer emitter transistor (DGILET) is a device in which the injection of minority carriers takes place from an inversion layer formed under a MOS gate. Therefore, the device can be switched between MOS and bipolar modes using the gate giving the means to achieve a superior combination of low conduction losses and low switching losses. The structure of the device and operation in both the unipolar and bipolar modes are described in detail. Devices have been fabricated on bulk silicon wafers using junction isolation and experimental results confirm the expected superior performance. In particular, the results confirm predictions that if the inversion layer injector is properly designed, the voltage snapback that occurs during the transition between unipolar and bipolar modes can be completely suppressed. This can be achieved with a compact structure in contrast to the extended structures required in anode-shorted lateral insulated gate bipolar transistor (LIGBTs). An equivalent circuit for the DGILET is presented and the control of the minority carrier injection is also analyzed. Experimental results show that the DGILET can switch at speeds approaching those characteristic of MOSFETs with operating current densities comparable to LIGBTs. The results show that the DGILET offers lower overall losses than an LIGBT at switching frequencies above about 10 kHz.

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

CMOS Compatible Shorted Anode Auxiliary Cathode Lateral Insulated Gate Bipolar Transistors

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

A Study of Fast Switching, Anode Shorted Lateral Insulated Gate Bipolar Transistor

Analysis of CMOS-compatible Lateral Insulated Base Transistors

CMOS Compatible 250 V Lateral Insulated Base Transistors

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

Static CMOS Latch-Up Considerations in HVIC Design

A CMOS Compatible Lateral Emitter Switched Thyristor with Enhanced Turn-on Capability

A Novel MCT Structure for Power Integrated Cirluits

Analysis of N-Channel MOS-controlled Thyristors

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

1.2 Kv Trench Insulated Gate Bipolar Transistors (igbt's) with Ultralow On-Resistance

A novel dual gated lateral MOS-bipolar power device

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

Analysis and Design of the Dual-Gate Inversion Layer Emitter Transistor

Design, Fabrication, And Performance Analysis Of Gan Vertical Electron Transistors With A Buried P/N Junction

Characterisation of Dual Gate Lateral Inversion Layer Emitter Transistor

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Performance Optimization of Lateral Algan/Gan Hemts with Cap Gate on 150-Mm Silicon Substrate